Near and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells (original) (raw)
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers
Michele Virgilio, Antonia Neels
Physical Review B, 2008
View PDFchevron_right
Temperature dependence of the direct interband transitions of a Ge/SiGe multiple-quantum-well structure with Ge-rich barriers
H. Von Känel
Physical Review B, 2012
View PDFchevron_right
Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon
Leon Lever
2011
View PDFchevron_right
Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates
aneeqa bashir
View PDFchevron_right
Electrical and physical properties of high-Ge-content Si/SiGe p-type quantum wells
Philip Batson
Physical review. B, Condensed matter, 1993
View PDFchevron_right
Infrared spectroscopy in p-type SiGe/Si quantum wells
YVES GULDNER
Applied Surface Science, 1996
View PDFchevron_right
Computation of the electronic structure and direct-gap absorption spectra in Ge-rich Si1−x Gex/Ge/Si1−xGex type-I quantum wells
Moncef SAID
The European Physical Journal B, 2013
View PDFchevron_right
Infrared absorption and admittance spectroscopy of Ge quantum dots on a strained SiGe layer
Andrew Yakimov
Semiconductor Science and Technology, 2011
View PDFchevron_right
Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers
H. Von Känel
Applied Physics Letters, 2011
View PDFchevron_right
Conduction band intersubband transitions in Ge/SiGe quantum wells
Giovanni Pizzi
Applied Physics Letters, 2009
View PDFchevron_right
Wave-function engineering and absorption spectra in Si0.16Ge0.84/Ge0.94Sn0.06/Si0.16Ge0.84 strained on relaxed Si0.10Ge0.90 type I quantum well
Moncef SAID
Journal of Applied Physics, 2014
View PDFchevron_right
Absorption and emission spectroscopy of intersubband transitions in Si[sub 1−x]Ge[sub x]/Si quantum wells
Jean-michel Lourtioz
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
View PDFchevron_right
Material Properties of Si-Ge/Ge Quantum Wells
David Miller
IEEE Journal of Selected Topics in Quantum Electronics, 2000
View PDFchevron_right
Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures
Xavier Le Roux
Optics Letters, 2010
View PDFchevron_right
UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation
Hongwei Zhao
View PDFchevron_right
Thermal relaxation processes probed by intersubband and inter-valence-band transitions in Si/Si[sub 1−x]Ge[sub x] multiple quantum wells
B. Adoram, Diego Krapf
Applied Physics Letters, 1999
View PDFchevron_right
Growth of Si 1 − x − y Ge x C y multi-quantum wells: structural and optical properties
Eliezer Finkman
Thin Solid Films, 1996
View PDFchevron_right
Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
Ter-Hoe Loh
Nanoscale Research Letters, 2007
View PDFchevron_right
Peculiarities and evolution of Raman spectra of multilayer Ge/Si(001) heterostructures containing arrays of low-temperature MBE-grown Ge quantum dots of different size and number density: Experimental studies and numerical simulations
Vladimir A Yuryev
2021
View PDFchevron_right
Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift
Giovanni Capellini
2012
View PDFchevron_right
Intersubband Transition Engineering in the Conduction Band of Asymmetric Coupled Ge/SiGe Quantum Wells
Michele Ortolani
Crystals
View PDFchevron_right
Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si
Ge Sel
IEEE Journal of Selected Topics in Quantum Electronics, 2010
View PDFchevron_right
Optical properties of bulk and multi-quantum well SiGe: C heterostructures
Eliezer Finkman
Journal of Crystal Growth, 1995
View PDFchevron_right
Above-room-temperature photoluminescence from a strain-compensated Ge/Si< inf> 0.15 Ge< inf> 0.85 multiple-quantum-well structure
Dumitru Dumcenco
Applied Physics Letters, 2012
View PDFchevron_right
Characterization of SiGe/Si multi-quantum wells for infrared sensing
Arash Salemi
Applied Physics Letters, 2013
View PDFchevron_right
Quantum-confined Stark effect in Ge/SiGe quantum wells: A tight-binding description
Giuseppe Grosso
Physical Review B, 2008
View PDFchevron_right
THE EFFECT STUDY OF Ge CONCENTRATION ON FTIR SPECTRA AND SURFACE TEXTURE OF 10-PERIOD MULTIPLE QUANTUM WELLS OF Si0.4Ge0.6, Si0.8Ge0.2 WITH 5nm WELL WIDTH
TJPRC Publication
TJPRC, 2013
View PDFchevron_right
The studies of Ge quantum dots on strained Si0.7Ge0.3 layer by photoluminescence and deep level transient spectroscopy
Zhenyang Zhong
Applied Surface Science, 2009
View PDFchevron_right
Room temperature direct gap electroluminescence from Ge/Si0.15Ge0.85 multiple quantum well waveguide
Jacopo Frigerio
Applied Physics Letters, 2011
View PDFchevron_right
Thermal relaxation processes in Si1−xGex/Si quantum wells studied by inter-subband and inter-valence band spectroscopy
Amir Sa'ar
Physica E: Low-dimensional Systems and Nanostructures, 2000
View PDFchevron_right
Transport and absorption in strain-compensated Si/Si1-xGex multiple quantum well and cascade structures deposited on Si0. 5Ge0. 5 pseudosubstrates
Claudiu V Falub
Materials science in …, 2005
View PDFchevron_right