(Al)GaInP laser with lateral confinement by epitaxial growth on nonplanar substrates (original) (raw)
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MOVPE growth of AlGaAs/GaInP diode lasers
Journal of Electronic …, 2000
High power diode lasers operating in the wavelength range 730-1060 nm are of significant interest for applications like pumping fiber amplifiers and solid-state lasers, for soldering, material processing or for applications in medicine, spectroscopy and metrology. In recent years Al-free diode lasers have shown improved performance in terms of output power 1 and long-term reliability. 2 Further, the fabrication of buried laser structures is facilitated in the absence of Al. However, the growth of GaInP and InGaAsP alloys on GaAs turns out to be challenging due to difficulties in growing thick ternary and quaternary layers that are precisely lattice-matched and due to miscibility and ordering problems. 3-5 These result in composition fluctuations and rough surfaces. To overcome these problems but to keep most of the advantages of the Al-free system we have combined GaInP waveguide layers with AlGaAs cladding layers for different types of diode laser structures. The formation of abrupt heterointerfaces between AlGaAs and InGaP is crucial for high power devices with good reliability. Several studies have characterized the GaInP/GaAs interface 6,7 and a quaternary intermediate layer between GaInP and GaAs has been re
2014
Threshold current of 2 mA at room temperature cw operation is realized in a vertical distributed feedback surface-emitting laser diode with lateral buried heterostructure CLBH). In this LBH structure, the vertical distributed feedback active region (AIGaAs/GaAs multilayer) is entirely surrounded with n-and p-type AIGaAs cladding layers for minoritycarrier confinement. The far-field angle is 7". The beam shape is nearly circular. However, the lasing spectrum is broad (2-3 nm) compared with the conventional edge-emitting laser. Major differences between the surface-emitting laser diode presented here and the conventional edgeemitting laser diode are discussed.
Crystalline perfection in GaInAsP/GaAs laser structures with GaInP or AlGaAs cladding layers
Materials Science and Engineering: B, 1997
The crystalline perfection of GaInAsP layers grown lattice-matched to GaAs by metal-organic vapour phase epitaxy (MOVPE) has been studied using cathodoluminescence (CL) and transmission electron microscopy (TEM). The tendency for phase separation observed for single layers with composition close to the miscibility gap is further enhanced in broad-area laser diodes, where even GaInAs grown on top of a decomposed layer can show decomposition. The crystalline perfection of the layer structure is correlated to the optoelectronic properties of the laser diodes. For buried laser structures, the presence of different growth facets leads to additional problems due to composition fluctuations that can result in defect formation when GaInAsP is used for the regrowth. 0 1997 Elsevier Science S.A.
Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs cladding layers
IEEE Journal of Quantum Electronics, 1993
Visible lasers with two strained GaInP quantum wells and AlGaAs cladding layers have been fabricated using metal-organic vapor phase epitaxy. As a device structure, a dry-etched surface ridge has been chosen, which results in a small astigmatism and a low threshold current. Owing to an electroplated heat spreader on top of the ridge, the devices can be operated continuous-wave junction-side-up at temperatures up to 100°C. Lasers mounted junction-side-down with coated mirror facets operating at 30 mW output power show singlemode behavior and good reliability, as proven by a lifetime test of over 3000 h.
“Spiked” GaInP Quantum Wells for Shorter Red Wavelength Emission
IEEE Photonics Technology Letters, 2000
Compositional and strain limitations are often restricting the emission wavelength from quantum-well (QW) lasers. The letter presents simulation and experimental results on the effects of including thin higher bandgap layers into GaInP QWs emitting in the short red wavelength range. These were considered "spiked" single QWs since the thin higher bandgap layers used in our studies varied in composition and led to carrier wavefunctions that are like perturbed single QW wavefunctions rather than wavefunctions of coupled QWs. The edge-emitting lasers having up to four-monolayer AlGaInP "spikes" in the QWs had an emission blueshift of up to 25 nm, whereas the degradation of other laser characteristics was in line with the degradation observed when similar emission blueshift was generated by conventional QW modification.
Pulsed-laser irradiation quantum well intermixing process in GaInAs/GaInAsP laser structures
Microelectronic Engineering, 2000
We report the development and characterization of a postgrowth bandgap modification technique of GaInAs / GaInAsP laser structures utilizing a Q-switched Nd:YAG laser with a pulse length of | 8 ns and repetition rate of 10 Hz. Quantum 22 well intermixing effect of the samples irradiated under pulsed energy densities of 2.8, 3.5 and 3.9 mJ mm at different exposure times was studied. A maximum bandgap shift of up to 112 meV has been observed from sample exposed to 3.9 mJ 22 mm for 5 min after subsequent annealing in a rapid thermal processor at 6258C for 120 s. A spectrum broadening of 3 22 meV, relative to the as-grown sample, was obtained from intermixed sample exposed to 2.8 mJ mm for 1 min indicating that the quality of the material remains high. A differential bandgap shift of 60 meV has been obtained between a gold-masked region and laser-irradiated region. Lasers with bandgap tuned to 82 nm relative to the as-grown lasers have been fabricated using this technique.
Solid source molecular beam epitaxy growth of 600-nm-range quantum well laser diodes
Journal of Crystal Growth, 1999
We have studied the growth of 600-nm range strained GaInP/AlGaInP quantum well lasers using solid phosphorous in a valved cracking cell by molecular beam epitaxy. Closely optimized growth conditions for AlGaInP-based materials have been determined. As a result, high-power red laser diodes have been prepared. Output power levels up to 3 W for the 670 nm, 2 W for the 650 nm and 1 W for the 630-nm lasers have been achieved in continuous wave mode. Preliminary life-tests have also been carried out for 670 and 650 nm devices. 0022-0248/99/$ } see front matter 1999 Elsevier Science B.V. All rights reserved. PII: S 0 0 2 2 -0 2 4 8 ( 9 8 ) 0 1 4 7 9 -1