Hydride vapour phase epitaxy growth and characterisation of GaN layers (original) (raw)
Growth of thick GaN layers with hydride vapour phase epitaxy
Carl Hemmingsson
Journal of Crystal Growth, 2005
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Direct Growth of GaN on (0001) Sapphire by Low Pressure Hydride Vapour Phase Epitaxy
M. Weyers
physica status solidi (a), 2001
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Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
silke christiansen
MRS Internet Journal of Nitride Semiconductor Research, 1996
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Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy
M. Bockowski
Journal of Crystal Growth, 2003
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Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties
O. Nam, Heonsu Jeon
Current Applied Physics, 2003
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The Growth Kinetics and Surface Morphology of GaN Epitaxial Layers on Sapphire
M. Tlaczala
Crystal Research and Technology, 1982
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Growth and morphology of Er-doped GaN on sapphire and hydride vapor phase epitaxy substrates
Andrew Steckl
1999
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Luminescence decay in highly excited GaN grown by hydride vapor-phase epitaxy
S. Juršėnas
Applied Physics Letters, 2003
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Micro epitaxial lateral overgrowth of GaN/sapphire by metal organic vapour phase epitaxy
Pierre Lefebvre
2002
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Buffer layers for the growth of GaN on sapphire by molecular beam epitaxy
Rainer Ebel
Journal of Crystal Growth, 1999
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Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown ‘Templates’
Evgenia Valcheva
MRS Proceedings, 1999
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On the chloride vapor-phase epitaxy growth of GaN and its characterization
J. Kumar
Journal of Crystal Growth, 2004
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Influence of growth temperature on structural and optical properties of laser MBE grown epitaxial thin GaN films on a-plane sapphire
Govind Gupta
Journal of vacuum science and technology, 2018
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The roles of low-temperature buffer layer for thick GaN growth on sapphire
Seogwoo Lee
Journal of Crystal Growth, 2008
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Microstructure of GaN grown by lateral confined epitaxy 2. GaN on patterned sapphire
Boris Meyler
Journal of Electronic Materials, 2003
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The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy
Arnel Salvador
Materials Science and Engineering: B, 1997
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High Resolution X-Ray Diffraction Analysis Of Gallium Nitride Grown On Sapphire By Halide Vapor Phase Epitaxy
Richard Matyi
MRS Proceedings, 1996
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High quality GaN layers grown by hydride vapor phase epitaxy — a high resolution X-ray diffractometry and synchrotron X-ray topography study
Jharna Chaudhuri
Materials Science and Engineering: B, 2000
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Single phase GaN on sapphire grown by metal-organic vapor phase epitaxy
Markus Pristovsek
Journal of Crystal Growth, 2011
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The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GAN
Thomas Kuech
MRS Internet Journal of Nitride Semiconductor Research
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Structure and luminescence of GaN layers
Torsten Barfels, Hans-Joachim Fitting
Applied Surface Science, 2001
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Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire
Andrey Naumov
Article, 2006
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Epitaxial growth of gallium nitride thin films on A-Plane sapphire by molecular beam epitaxy
Theodore Moustakas
Journal of Applied Physics, 1999
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Microstructure and growth morphology as related to electro-optical properties of heteroepitaxial wurtzite GaN on sapphire (0001) substrates
silke christiansen
Materials Science and Engineering: B, 1997
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Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire
Như Phạm
MRS Internet Journal of Nitride Semiconductor Research, 1996
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X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism
Thomas Kuech
Journal of Applied Physics, 2003
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Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD
Andrzej Grzegorczyk
Journal of Crystal Growth, 2005
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Influence of sapphire annealing in a trimethylaluminum atmosphere on GaN epitaxy by metal-organic chemical vapor deposition
Andrzej Grzegorczyk
Thin Solid Films, 2008
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Lattice parameters of GaN single crystals, homoepitaxial layers and heteroepitaxial layers on sapphire
P. Prystawko
Journal of Alloys and Compounds, 1999
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