Recent developments on silicon photomultipliers produced at FBK-irst (original) (raw)

Characteristics of a prototype matrix of Silicon PhotoMultipliers (SiPM)

Journal of Instrumentation, 2009

This work reports on the electrical (static and dynamic) as well as on the optical characteristics of a prototype matrix of Silicon Photomultipliers (SiPM). The prototype matrix consists of 4 × 4 SiPM's on the same substrat fabricated at FBK-irst (Trento, Italy). Each SiPM of the matrix has an area of 1×1mm 2 and it is composed of 625 microcells connected in parallel. Each microcell of the SiPM is a GM-APD (n + /p junction on P+ substrate) with an area of 40 × 40µm 2 connected in series with its integrated polysilicon quenching resistance. The static characteristics as breakdown voltage, quenching resistance, post-breakdown dark current as well as the dynamic characteristics as gain and dark count rate have been analysed. The photon detection efficiency as a function of wavelength and operation voltage has been also estimated.

Status report on silicon photomultiplier development and its applications

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2006

The state of art of the Silicon Photomultipliers (SiPM's)-their features, possibilities and applications-is given. The significant progress of this novel technique of photo detection is described and discussed. r

Large area silicon photomultipliers: Performance and applications

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2006

The Silicon Photomultipliers (SiPMs) with large area up to 10 Â 10 mm 2 are considered and their optimal parameters, such as efficiency, gain, dark rate, afterpulsing probability and optical crosstalk are discussed. The 3 Â 3 mm 2 SiPM is described and its performance is demonstrated. Three examples of 3 Â 3 mm 2 SiPM application are given: (1) transition radiation X-ray detection; (2) time of flight measurements with fast scintillators; (3) detection of PET gammas using LYSO crystals. Corresponding experimental results are presented and discussed. r

Silicon Photomultiplier Technology at STMicroelectronics

IEEE Transactions on Nuclear Science, 2000

In this paper we present the results of the first electrical and optical characterization performed on 1 mm 2 total area Silicon Photomultipliers (SiPM) fabricated in standard silicon planar technology at the STMicroelectronics Catania R&D clean room facility. The device consists of 289 microcells and has a geometrical fill factor of 48%. Breakdown voltage, gain, dark noise rate, crosstalk, photon detection efficiency and linearity have been measured in our laboratories. The optical characterization has been performed by varying the temperature applied to the device. The results shown in the manuscript demonstrate that the device already exhibits relevant features in terms of low dark noise rate and inter-pixel crosstalk probability, high photon detection efficiency, good linearity and single photoelectron resolution.

Silicon Photomultipliers: Status and Prospects

Physics of Particles and Nuclei Letters, 2020

Explosive progress in semiconductors physics and technology over the last century has led to replacement of almost all electro-vacuum devices with their corresponding solid-state counterparts. The only remaining exceptions were vacuum photomultiplier tubes (PMTs). In this paper, physical and technological problems are analyzed, the solution of which led to the creation of the most capable solid-state analogues of the well-known PMTs-silicon photomultipliers (SiPMs). Mass application of SiPM devices is planned in large-scale colliders, such as LHC, NICA, JUNO, and others. The status, prospects and ways of further improving the parameters of SiPMs are discussed.

New results on the characterization of ITC-irst silicon photomultipliers

2007

In this paper we report briefly on the development of Silicon Photomultipliers at ITC-irst. First, details on the technology and geometry are given. Then, experimental data are shown including static IV characterization, signal characterization, noise properties and photodetection efficiency.

Recent developments in silicon photomultipliers

Nuclear Instruments and Methods in Physics Research …, 2007

A novel type of avalanche photodetector with Geiger mode operation, known as a Silicon PhotoMultiplier (SiPM) provides an interesting advance in photodetection and is already an alternative to traditional PMTs in many applications. The state of the art of the SiPMs-their main properties and problems-are discussed.

The recent development and study of silicon photomultiplier

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2004

Recent developments and results from the study of a Silicon Solid State Photomultiplier (Si-PM) are presented. The basis of this new type of photodetector is a fine structure of microcells operating in the Geiger mode with an internal gain greater than 10 6 : Common signal output allows for the detector to be operated in the proportional mode, and to reach a dynamic range of 1:5 Â 10 3 : Such photodetectors have shown single photon response at room temperature with a fast timing of $100 ps. They are compact, robust and non-sensitive to magnetic fields. Results show the detection of low-intensity light in single photon mode and the detection of minimal ionizing particles using a scintillation tile for hadron calorimetry. The silicon photomultiplier is suitable for wide application in scintillation calorimetry, medical application, etc. r