Recent developments on silicon photomultipliers produced at FBK-irst (original) (raw)

2007

https://doi.org/10.1109/NSSMIC.2007.4436565

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Abstract

In this contribution, new developments on the silicon photomultipliers (SiPM) fabricated at FBK-irst (Trento, Italy) are reported. With respect to the first series of devices produced in 2005/2006, there have been major improvements on both the the layout and the technology. Concerning the first aspect we fabricated SiPMs with increased fill factor and with different geometries (square/circular devices, arrays and matrices of SiPMs) to meet the requirements of different applications.

Silicon Photomultiplier Technology at STMicroelectronics

IEEE Transactions on Nuclear Science, 2000

In this paper we present the results of the first electrical and optical characterization performed on 1 mm 2 total area Silicon Photomultipliers (SiPM) fabricated in standard silicon planar technology at the STMicroelectronics Catania R&D clean room facility. The device consists of 289 microcells and has a geometrical fill factor of 48%. Breakdown voltage, gain, dark noise rate, crosstalk, photon detection efficiency and linearity have been measured in our laboratories. The optical characterization has been performed by varying the temperature applied to the device. The results shown in the manuscript demonstrate that the device already exhibits relevant features in terms of low dark noise rate and inter-pixel crosstalk probability, high photon detection efficiency, good linearity and single photoelectron resolution.

Silicon Photomultipliers: Status and Prospects

Physics of Particles and Nuclei Letters, 2020

Explosive progress in semiconductors physics and technology over the last century has led to replacement of almost all electro-vacuum devices with their corresponding solid-state counterparts. The only remaining exceptions were vacuum photomultiplier tubes (PMTs). In this paper, physical and technological problems are analyzed, the solution of which led to the creation of the most capable solid-state analogues of the well-known PMTs-silicon photomultipliers (SiPMs). Mass application of SiPM devices is planned in large-scale colliders, such as LHC, NICA, JUNO, and others. The status, prospects and ways of further improving the parameters of SiPMs are discussed.

New results on the characterization of ITC-irst silicon photomultipliers

2007

In this paper we report briefly on the development of Silicon Photomultipliers at ITC-irst. First, details on the technology and geometry are given. Then, experimental data are shown including static IV characterization, signal characterization, noise properties and photodetection efficiency.

Recent developments in silicon photomultipliers

Nuclear Instruments and Methods in Physics Research …, 2007

A novel type of avalanche photodetector with Geiger mode operation, known as a Silicon PhotoMultiplier (SiPM) provides an interesting advance in photodetection and is already an alternative to traditional PMTs in many applications. The state of the art of the SiPMs-their main properties and problems-are discussed.

The recent development and study of silicon photomultiplier

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2004

Recent developments and results from the study of a Silicon Solid State Photomultiplier (Si-PM) are presented. The basis of this new type of photodetector is a fine structure of microcells operating in the Geiger mode with an internal gain greater than 10 6 : Common signal output allows for the detector to be operated in the proportional mode, and to reach a dynamic range of 1:5 Â 10 3 : Such photodetectors have shown single photon response at room temperature with a fast timing of $100 ps. They are compact, robust and non-sensitive to magnetic fields. Results show the detection of low-intensity light in single photon mode and the detection of minimal ionizing particles using a scintillation tile for hadron calorimetry. The silicon photomultiplier is suitable for wide application in scintillation calorimetry, medical application, etc. r

Characterization of Silicon Photomultipliers for Detector Developments

2020

Photon detection is a revolutionary technique to learn the properties of a matter on the atomic scale. It has become an imperative tool for an immense range of fields including high energy physics, astrophysics, automotive industry, nuclear medicine, materials research, civil engineering, etc. The Photomultiplier Tubes (PMT), the pioneering technology in photon detection was introduced over 80 years ago. However, Silicon-based Photomultipliers (SiPM)have been rapidly replacing the PMTs as an industry standard due to its lower power consumption and smaller size. It is a solid-state photodetector, which guarantees an efficient detection of a single photon. The SiPM technology has evolved gradually in last three decades. Nevertheless, the technology is not yet fully understood and every study contributes to a better comprehension of the subject matter. This thesis is focused on investigating the processes of charge release and the photon detection efficiency (PDE) recovery of the SiPM,...

Development of Silicon PhotoMultipliers at FBK-irst

Nuovo Cimento Della Societa Italiana Di Fisica C-Geophysics and Space Physics, 2007

We report on the development of Silicon PhotoMultipliers (SiPM) at the Fondazione Bruno Kessler (FBK)-irst (Trento, Italy) in the framework of a collaboration with INFN. Device geometry and technology are resumed, and selected results from the characterization of SiPM prototypes from three production batches are reported, including static, dynamic, and noise properties, as well as photodetection efficiency. PACS 29.40.Wk-Solid-state detectors. PACS 85.30.De-Semiconductor-device characterization, design, and modeling. PACS 85.30.Mn-Junction breakdown and tunneling devices (including resonance tunneling devices). PACS 85.60.Gz-Photodetectors (including infrared and CCD detectors).

Silicon photomultiplier and its possible applications

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2003

The Silicon Photomultiplier (SiPM) is a semiconductor device consisting of many photon microcounters (10 3 mm À2 ) positioned on a common Si substrate. SiPM operates in a limited Geiger mode and has single photoelectron gain (10 6 ) and photon detection efficiency (20%) similar to vacuum PMT. Main SiPM features are described and a number of examples of its possible applications are demonstrated, such as scintillator fiber readout, scintillator tiles+WLS readout, imaging Cherenkov counter timing. These SiPM applications are based on experimental test data and SiPM performance is compared with other photodetectors (PMT, APD, HPD, VLPC). r

Characterization of the first prototypes of silicon photomultiplier fabricated at ITC-irst

IEEE Transactions on Nuclear Science, 2007

This paper reports on the electrical characterization of the first prototypes of Geiger-Mode Avalanche Photodiodes (GM-APDs) and Silicon Photomultipliers (SiPMs) produced at ITC-irst, Trento. Both static and functional measurements have been performed in dark condition. The static tests, consisting in reverse and forward IV measurements, have been performed on 20 GM-APDs and 90 SiPMs. The breakdown voltage, the quenching resistance value and the current level have been proved to be very uniform. On the other hand, the analysis of the dark signals allowed the extraction of important properties such as the dark count rate, the gain, the after-pulse and optical cross-talk (in case of the SiPMs) rates. These parameters have been evaluated as a function of the bias voltage, showing trends perfectly compatible with the theory of the device.

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References (4)

C. Piemonte, "A new Silicon Photomultiplier structure for blue light detection" Nuclear Instruments & Methods, vol. A568 (2006), pp. 224- 232.
C. Piemonte, R. Battiston, M. Boscardin et al., "Characterization of the First Prototypes of Silicon Photomultiplier Fabricated at ITC-irst" IEEE Trans. on Nucl. Science, Vol. 54, N. 1 February 2007, pp. 236- 244.
C. Piemonte, et al., "New results on the characterization of ITC-irst Silicon Photomultipliers", IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS-MIC'06), Conference Record, Paper N42-4, San Diego, California, 29 october-4 november 2006.
G. Collazuol, et al., "Single photon timing resolution and detection efficiency of the IRST silicon photomultipliers", Nuclear Instruments & Methods, vol. A581 (2007), pp. 461-464.

Characteristics of a prototype matrix of Silicon PhotoMultipliers (SiPM)

Journal of Instrumentation, 2009

This work reports on the electrical (static and dynamic) as well as on the optical characteristics of a prototype matrix of Silicon Photomultipliers (SiPM). The prototype matrix consists of 4 × 4 SiPM's on the same substrat fabricated at FBK-irst (Trento, Italy). Each SiPM of the matrix has an area of 1×1mm 2 and it is composed of 625 microcells connected in parallel. Each microcell of the SiPM is a GM-APD (n + /p junction on P+ substrate) with an area of 40 × 40µm 2 connected in series with its integrated polysilicon quenching resistance. The static characteristics as breakdown voltage, quenching resistance, post-breakdown dark current as well as the dynamic characteristics as gain and dark count rate have been analysed. The photon detection efficiency as a function of wavelength and operation voltage has been also estimated.

Status report on silicon photomultiplier development and its applications

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2006

The state of art of the Silicon Photomultipliers (SiPM's)-their features, possibilities and applications-is given. The significant progress of this novel technique of photo detection is described and discussed. r

Large area silicon photomultipliers: Performance and applications

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2006

The Silicon Photomultipliers (SiPMs) with large area up to 10 Â 10 mm 2 are considered and their optimal parameters, such as efficiency, gain, dark rate, afterpulsing probability and optical crosstalk are discussed. The 3 Â 3 mm 2 SiPM is described and its performance is demonstrated. Three examples of 3 Â 3 mm 2 SiPM application are given: (1) transition radiation X-ray detection; (2) time of flight measurements with fast scintillators; (3) detection of PET gammas using LYSO crystals. Corresponding experimental results are presented and discussed. r

Silicon photomultipliers with area up to 9 mm2 in a 0.35 μm CMOS process

IEEE Journal of the Electron Devices Society

Silicon photomultipliers produced using standard complementary metal oxide semiconductor (CMOS) processes are at the basis of modern applications of sensors for weak photon fluxes. They allow in fact to integrate transistor-based electronic components within sensors and provide intelligent read-out strategies. In this paper we investigate the scalability of a 0.35 µm CMOS process to large area devices. We report the design and characterization of SiPMs with a total area of 1 mm 2 , 4 mm 2 and 9 mm 2 . Cross talk, photon detection efficiency at 420 nm, gain at 2.5 V overvoltage and breakdown voltage temperature coefficient do not depend on the total area of the sensor and are 10%, 35%, 2.5 × 10 6 and 35 mV/K respectively. The dark count rate scales with the total area of the device as 180 kHz/mm 2 . The total output capacitance, the decay time of the single photon signal and the single photon time resolution depend on the area of the device. We obtain a capacitance of 66.9 pF, 270.2 pF and 554.0 pF, a decay time of (27.1 ± 0.1) ns, (50.8 ± 0.1) ns and (78.2 ± 0.1) ns and a single photon time resolution of (77.97 ± 0.51) ps, (201.67 ± 0.98) ps and (282.28 ± 0.86) ps for the 1 mm 2 , 4 mm 2 and 9 mm 2 SiPMs respectively.

Towards a new concept of photomultiplier based on silicon technology

2007

In order to build a new concept of photomultiplier based on silicon technology, design and characterization of 5x5 arrays of a new generation of single photon avalanche diodes (SPAD) manufactured by ST-Microelectronics have been performed. Single photons sensitivity, dark noise and timing resolution of the SPAD- STM devices in several experimental conditions have been evaluated. Moreover, the effects arising from

A simple extraction procedure for determining the electrical parameters in Silicon Photomultipliers

2013 European Conference on Circuit Theory and Design (ECCTD), 2013

The Silicon Photomultiplier (SiPM) is a promising kind of device able to handle single photons thus permitting the measurement of weak optical signals. The design of a highperformance front-end electronics for the read-out, requires an accurate electrical model of the SiPM. A reliable model was developed in the past but the parameter extraction procedure is rather cumbersome and requires several measurement steps. In this communication we present a simple extraction procedure that can be performed with two simple measurement steps. The extraction procedure is applied to a 10×10 SiPM and is validated by comparing the equivalent spice model to measurement results.

Characterisation of a Silicon Photomultiplier of 64 channels

2018

This work presents the study of a 64 channel silicon photomultiplier (3.2 x 3.2 mm each channel) built by Hammamatsu. From the experimental data, the values of the gain at four different voltages (68V, 68.5V, 69V, 69.5V) are measured for each channel and, the breakdown voltage and the gain per voltage, for each channel, have been determined. Also measurements at 70V have been preformed but rejected because of the amount of noise.

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Characteristics of a prototype matrix of Silicon PhotoMultipliers (SiPM)

Journal of Instrumentation, 2009

Recent developments on silicon photomultipliers produced at FBK-irst (original) (raw)

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