Optimal Design Of A High Pressure Organometallic Chemical Vapor Deposition Reactor (original) (raw)

Simulation of a vertical reactor for high pressure organometallic chemical vapor deposition

Materials Science and Engineering: B, 1998

The suitability of a vertical cylindrical reactor with highly constrained radial flow from a central gas injection port past a set of heated substrate wafers that are embedded in the top channel wall has been evaluated in the context of organometallic chemical vapor deposition (OMCVD) at elevated pressure. Numerical simulations showed that, in addition to the limitation on the channel height necessary for preventing buoyancy driven recirculation, negotiating the ninety-degree bend at the inlet is problematic and also constrains the channel height below a critical value, at which the radial flow area after the inlet bend is equal to the cross-sectional area of the central gas injection port. Restricting the channel height poses the danger of heating of the channel wall opposite to the substrate wafers causing potential problems with deposition of decomposition products and competitive polycrystalline film growth at this location. These problems can be avoided by actively cooling the channel wall opposite to the substrate and by keeping the retention time of the source vapor molecules and fragments thereof in the wafer location below a critical value.

Some recent developments in chemical vapor deposition process and equipment modeling

Le Journal de Physique IV, 1999

An overview is given of the novel developments and trends in Chemical Vapor Deposition process and equipment modeIing over the last five years. The developments are illustrated with three recent examples of the modeling research in the authors' group: Turbulent flow phenomena in cold-wall CVD reactors, selectivity loss in tungsten LPCVD, and acetylene combustion diamond CVD. Validations against experimental data, e.g. in situ temperature and concentration measurements, are shown. The incorporation of CVD simulation models into commercial software packages is discussed.

Computer modeling of chemical vapor deposition processes

Journal of Materials Shaping Technology, 1990

A general purpose computer model for describing the transport phenomena and resulting rate of deposition has been described. Partial differential equations describing the conservation of mass, momentum, energy, and chemical species are solved by a computer program employing the finite difference method. The system considered in this paper is deposition of silicon in a vertical stagnation flow reactor by the reaction of silicon tetrachloride and hydrogen. The program allows for multiple chemical species and natural convection effects. Predicted silicon deposition rates along the substrate are in reasonable agreement with experimental values available in the literature. The effect of gas inlet configuration on the uniformity of deposition has been studied. The model can be used as a tool for design optimization of such reactors.

Optimal heat transfer design of chemical vapor deposition reactors

1995

A new tool for optimal heat transfer design has been constructed by coupling the OPT++ optimization library to the TACO2D nite element heat transfer code. The optimization heat transfer code can beused to quickly and e ciently nd optimal operating parameters required for target design criteria. This tool has been applied to the heat transfer design of a rotating disk chemical vapor deposition reactor. The results from two reactor design problems indicate that optimal solutions can befound quickly and e ciently.

Parametric Modeling and Optimization of Chemical Vapor Deposition Process

Journal of Manufacturing Science and Engineering, 2009

This paper focuses on the parametric modeling and optimization of the chemical vapor deposition (CVD) process for the deposition of thin films of silicon from silane in a vertical impinging CVD reactor. The parametric modeling using radial basis function for various functions, which is related to the deposition rate and uniformity of the thin films, is studied. These models are compared and validated with additional sampling data. Based on the parametric models, different optimization formulations for maximizing the deposition rate and the working areas of thin film are performed.

Chemical vapor deposition modeling: An assessment of current status

1991

The shortcomings of earlier approaches that assumed thermochemical equilibrium and used chemical vapor deposition (CVD) phase diagrams are pointed out. Significant advancements in predictive capabilities due to recent computational developments, especially those for deposition rates controlled by gas phase mass transport, are demonstrated. The importance of using the proper boundary conditions is stressed, and the availability and reliability of gas phase and surface chemical kinetic information are emphasized as the most limiting factors. Future directions for CVD are proposed on the basis of current needs for efficient and effective progress in CVD process design and optimization.

The modeling of realistic chemical vapor infiltration/deposition reactors

International Journal for Numerical …, 2010

We describe the low Mach number equations as well as a second-order numerical integration procedure that are used to solve a realistic chemical vapor infiltration/chemical vapor deposition (CVI/CVD) problem. The simulation accounts for a homogeneous gas ...

7 th European Symposium on Computer Aided Process Engineering -ESCAPE17

During the last decade, a major shift has begun in chemical industry, since there is an urgent need for new tools that are able to support the optimization of operating technologies. This trend is driven by the new tools of information technology. Approaches of this shift differ from company to company but one common feature is that communication between design, manufacturing, marketing and management is centered on modeling and simulation, which integrates not only the whole product and process development chains, but all the process units, plants, and subdivisions of the company. These approaches are under continuous development. Among the wide range of possible improvements, this paper focuses to two frequent imperfections: (i) developed and refined process models are used only in advanced process control system (APC) integrated into distributed control system (DCS) and operator training systems (OTS), and not for detailed analysis and optimization, and (ii) optimal process operating points of these chemical plants are adjusted only at the design and test phase of a new technology, but optima moves with time, new catalyst system, lower price of reactants, claim for new or higher purity products, etc. The aim of this paper is to review, how to manage process optimization, and to show our process simulator based on the chemical engineering model of the technology. This paper will present a case study to demonstrate the technological and ecological benefits of the analysis and optimization of an B. Balasko et al. operating multi-product polymerization plant. The models of advanced process control system (APC) and reactor cascade were implemented in MATLAB ® Simulink ® environment, as a powerful and popular dynamic simulator.