A high breakdown-voltage SiCN/Si heterojunction diode for high-temperature applications (original) (raw)
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IEEE Transactions on Electron Devices, 1994
AbstructSiCISi heterojunction diodes have been fabricated by two different rapid thermal chemical vapor deposition (RTCVD) processes: a localized self-selective growth and blanket growth. The self-selective growth of crystalline cubic (p) SIC was obtained by propane carbonization of the Si substrate in regions unprotected by an Si02 layer, producing planar diodes. Mesa diodes were fabricated using the blanket growth of polycrystalline p-Sic produced by the decomposition of methylsilane (CH3 SiH3). The SiC/Si heterojunction diodes show good rectifying properties for both device structures. Reverse breakdown voltage of 50 V was obtained with the self-selective Sic& diode. The mesa diodes exhibited even higher breakdown voltages (Vbr) of 150 V and excellent ideality factors of 1.06 at 25°C. The high Vbr and good forward rectifying characteristics indicate that the SiC/Si heterojunction diode represents a promising approach for the fabrication of wide-gap emitter SiC/Si heterojunction bipolar transistors.
The Response of High Voltage 4H-SiC P-N Junction Diodes to Different Edge Termination Techniques
MRS Proceedings, 1998
Edge termination is an important aspect in the design of high power p-n junction devices. In this paper, we compare the breakdown characteristics of 4H-SiC p+-n diodes with oxide passivation and with edge termination using either low or high energy ion implantations. N- and p-type epilayers of 4H-SiC were grown by chemical vapor deposition on n+ 4H-SiC wafers. Circular mesa structures of different diameters were patterned and isolated by reactive ion etching. Four types of samples were fabricated. The first group was not implanted or passivated and was left for control. The second type consisted of oxide-passivated diode structures while the third and fourth types were ion implanted with 30 keV Ar+ and 2.2 MeV He+ ions, respectively. The time dependent breakdown characteristics were determined using a fast voltage ramp technique. The reverse bias breakdown voltages and leakage currents of these diodes were different for the different types of the edge termination. Diodes terminated ...
Scientific Reports
This work examines the stability of epitaxial 3C-SiC/Si heterojunctions subjected to heat treatments between 1000 °C and 1300 °C. Because of the potential for silicon carbide in high temperature and harsh environment applications, and the economic advantages of growing the 3C-SiC polytype on large diameter silicon wafers, its stability after high temperature processing is an important consideration. Yet recently, this has been thrown into question by claims that the heterojunction suffers catastrophic degradation at temperatures above 1000 °C. Here we present results showing that the heterojunction maintains excellent diode characteristics following heat treatment up to 1100 °C and while some changes were observed between 1100 °C and 1300 °C, diodes maintained their rectifying characteristics, enabling compatibility with a large range of device fabrication. The parameters of as-grown diodes were J 0 = 1 × 10 −11 A/mm 2 , n = 1.02, and +/−2V rectification ratio of 9 × 10 6. Capacitance and thermal current-voltage analysis was used to characterize the excess current leakage mechanism. The change in diode characteristics depends on diode area, with larger areas (1 mm 2) having reduced rectification ratio while smaller areas (0.04 mm 2) maintained excellent characteristics of J 0 = 2 × 10 −10 A/mm 2 , n = 1.28, and +/−2V ratio of 3 × 10 6. This points to localized defect regions degrading after heat treatment rather than a fundamental issue of the heterojunction.
Current mechanisms in n-SiC/p-Si heterojunctions
2008 Conference on Optoelectronic and Microelectronic Materials and Devices, 2008
Current-voltage characteristics of 3C-SiC/Si heterojunction diodes are presented with reverse breakdown voltage exceeding 200V, leakage current of 1.3mAcm-2 at 200V, and a +/-1V rectification ratio of 200,000. The reverse leakage current was observed to have both temperature and field dependence and hence a model is presented to explain this observation based on a trap assisted tunneling-thermal emission mechanism located at the SiC/Si interface. With further improvements in the SiC crystal quality at the silicon interface, trap concentrations and thus reverse bias leakage currents will be reduced.
High doped MBE Si p–n and n–n heterojunction diodes on 4H-SiC
Microelectronics Journal, 2007
The physical and electrical properties of heavily doped silicon (5 Â 10 19 cm À3 ) deposited by molecular beam epitaxy (MBE) on 4H-SiC are investigated in this paper. Silicon layers on silicon carbide have a broad number of potential applications including device fabrication or passivation when oxidised. In particular, Si/SiC contacts present several atractive material advantages for the semiconductor industry and especially for SiC processing procedures for avoiding stages such as high temperature contact annealing or SiC etching. Si films of 100 nm thickness have been grown using a MBE system after different cleaning procedures on n-type (0 0 0 1) Si face 81 off 4H-SiC substrates. Isotype (n-n) and an-isotype (p-n) devices were fabricated at both 500 and 900 1C using antimonium (Sb) or boron (B), respectively. X-ray diffraction analysis (XRD) and scanning electronic mircorscope (SEM) have been used to investigate the crystal composition and morphology of the deposited layers. The electrical mesurements were performed to determine the rectifiying contact characteristics and band offsets. r
A 4H-SiC p–i–n Diode Fabricated by a Combination of Sublimation Epitaxy and CVD
Semiconductors, 2005
The possibility of fabricating heavily doped ( N a -N d ≥ 1 × 10 19 cm -3 ) p + -4 H -SiC layers on CVD-grown lightly doped n -4 H -SiC layers by sublimation epitaxy has been demonstrated. It is shown that a Au/Pd/Ti/Pd contact, which combines a low specific contact resistance (~2 × 10 -5 Ω cm 2 ) with high thermal stability (up to 700 ° C), is the optimal contact to p-4 H -SiC. The p -n structures obtained are used to fabricate packaged diodes with a breakdown voltage of up to 1400 V.
Characterization of SiC Diodes in Extremely High Temperature Ambient
Twenty-First Annual IEEE Applied Power Electronics Conference and Exposition, 2006. APEC '06., 2006
This paper discusses the static and dynamic behavior of the body diode buried in SiC JFETs and SiC Schottky Barrier Diodes (SBDs). The device parameters are extracted from experimental results and their temperature dependencies are discussed. There is reverse current flow from source to drain in the channel of JFETs for on condition at low temperatures. In higher temperatures, it tends to flow through the body diode due to the increase of the resistance across the channel. The dynamic characteristics indicate that the reverse recovery phenomena of the body diode in a SiC JFET deteriorates with increasing temperature. It is therefore desirable to add an external SiC SBD for improving the static and dynamic behavior for high temperature operation of SiC JFETs.
Electric field breakdown mechanisms in high power epitaxial 4H-SiC p-n junction diodes
ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings, 1996
Silicon carbide (Sic) is an excellent semiconductor for the fabrication of high power and high temperature electronic devices. Sic pn junctions are critical components of Sic high power devices and circuits. However, the high electric field behavior of S i c p-n junction structures is not well characterized. The study of the high field breakdown mechanisms of Sic p-n junction plays an important role in determining the proper design of S i c high power p-n junctionbased devices. We have determined the high field breakdown behaviors of several types of 4H-Sic epitaxial p-n junction diodes of different design. In our efforts to increase the breakdown voltage, we have found that oxide passivation did not substantially affect the breakdown voltage but edge termination using argon ion implantation is effective in improving the breakdown voltage of Sic-p-n junction diodes.
IEEE Transactions on Electron Devices, 1999
This paper outlines the dynamic reversebreakdown characteristics of low-voltage (<250 V) small-area <5 2 10 04 cm 2) 4H-SiC p + n diodes subjected to nonadiabatic breakdown-bias pulsewidths ranging from 0.1 to 20 s. 4H-SiC diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities approximately five times larger than the average failure power density of reliable silicon pn rectifiers. This result indicates that highly reliable low-voltage SiC rectifiers may be attainable despite the presence of elementary screw dislocations. However, the impact of elementary screw dislocations on other more useful 4H-SiC power device structures, such as high-voltage (>1 kV) pn junction and Schottky rectifiers, and bipolar gain devices (thyristors, IGBT's, etc.) remains to be investigated.
4H–SiC p–n diodes and gate turnoff thyristors for high-power, high-temperature applications
Solid-State Electronics, 2000
This paper presents an overview of SiC power devices. The progress in pn junction diode development is described. The data on 10 A, 1000 V, packaged 4H±SiC ion-implanted p + nn + diode are presented. It is found that in order to develop high voltage, high current diodes, it is critical to reduce dislocation density below 10 3 cm À2 , and increase substrate doping of n + 4H±SiC above 10 19 cm À3 . It is simply not enough to reduce the micropipe density to below 1 cm À2 . The paper introduces a new power switching device con®guration, namely, JFET controlled thyristor (JCT). It is the most promising near term SiC switching device given its high power potential, ease of turno, potential for 5008C operation and resulting reduction in cooling requirements. Experimental demonstration of the hybrid JCT is presented with a turn-o measurement of 1 A in less than 100 ns. It is further concluded that in order to take advantage of SiC power devices, high temperature packages and components with double sided attachment need to be developed along with the SiC power devices. #