1∕f noise in GaN∕AlGaN heterostructure field-effect transistors in high magnetic fields at 300 K (original) (raw)

2004, Journal of Applied Physics

AI-generated Abstract

The study investigates the low-frequency (1∕f) noise in GaN/AlGaN heterostructure field-effect transistors (HFETs) under high magnetic fields at room temperature (300 K). It explores the dominant mechanisms behind the observed noise, specifically focusing on the fluctuations of the number of electrons in the channel, as opposed to mobility fluctuations. The findings indicate that the noise properties can be significantly influenced by magnetic fields, offering insights for improved performance in high-power and low-noise electronic applications.