A finite element study of the stress and strain fields of InAs quantum dots embedded in GaAs (original) (raw)

Strain effects on pyramidal InAs/GaAs quantum dot

Mao-Kuen Kuo

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Strain-interactions between InAs/GaAs quantum dot layers

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Thin Solid Films, 2004

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Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position

manel souaf

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Two-step strain analysis of self-assembled InAs/GaAs quantum dots

Mao-Kuen Kuo

Semiconductor Science and Technology, 2006

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Strain in inhomogeneous InAs/GaAs quantum dot structures

Daniele Barettin

Journal of Physics: Conference Series, 2012

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Quantitative strain analysis of InAs/GaAs quantum dot materials

Per Vullum

Scientific reports, 2017

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InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure

Dieter Bimberg

Physical Review B, 1995

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Strain and optical transitions in InAs quantum dots on (001) GaAs

Y. Fu

Superlattices and Microstructures, 2001

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Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs

divine kumah

Applied Physics Letters, 2011

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Shape transition during epitaxial growth of InAs quantum dots on GaAs(001): Theory and experiment

Armando Rastelli

Physical Review B, 2006

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Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

N. Cherkashin

Applied Physics Letters, 2013

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Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using in situ X-ray diffraction

Itaru Kamiya

Journal of Applied Physics, 2015

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Atomic structures of two-dimensional strained InAs epitaxial layers on a GaAs (001) surface: in situ observation of quantum dot growth

Rauf Bakhtizin, Yukio Hasegawa

2000

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Strain Relaxation of Self-Assembled InAs/GaAs(001) Quantum Dots Observed by Reflection High-Energy Electron Diffraction

Takashi Hanada

Japanese Journal of Applied Physics, 2001

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Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures

Jen-inn Chyi

Applied Physics Letters, 2000

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Nanometer-Scale Resolution of Strain and Interdiffusion in Self-Assembled InAs/GaAs Quantum Dots

Jorge Mario Garcia

Physical Review Letters, 2000

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Emission and elastic strain study in GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells with embedded InAs quantum dots

Georgiy Polupan

Journal of Materials Science: Materials in Electronics, 2017

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Strain-induced variations of electronic energy band edges of embedded semiconductor quantum dots in half-space substrates

Ernian Pan

Journal of Applied Physics, 2009

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Strain distributions in group IV and III-V semiconductor quantum dots

Imalie Gamalath

2013

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Anisotropic Lattice Deformation of InAs Self-Assembled Quantum Dots Embedded in GaNAs Strain Compensating Layers

Sasikala Ganapathy

Japanese Journal of Applied Physics, 2006

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Strain effects on the Electronic and Optical Properties of InAs/GaAs Quantum Dots: Tight‐binding Study. 27th International Conference on the Physics of Semiconductors, ICPS-27, 772(30), 745-746 (2005).

Roberto Santoprete

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Impact of vertical inter-QDs spacing correlation with the strain energy in a coupled bilayer quantum dot heterostructure

Saumya Sengupta

Journal of Alloys and Compounds, 2017

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Strain study of self-assembled InAs quantum dots by ion channeling technique

Hsing-Yeh Wang

Journal of Applied Physics, 2006

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Elastic stress and emission nonhomogeneity in asymmetric InAs quantum dot in a well structures

Jesús Gomez

physica status solidi (c), 2011

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Theoretical Investigations for Strain Relaxation and Growth Mode of InAs Thin layers on GaAs(111)A

Toru Akiyama

Condensed Matter

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Application of external tensile and compressive strain on a single layer InAs/GaAs quantum dot via epitaxial lift-off

Karim Omambac, M. Balgos, Arnel Salvador, Armando Somintac

physica status solidi (b), 2013

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Theoretical analysis of strain and strain decay in InAs∕GaAs(001) multilayer quantum dot growth

Stanko Tomic

Journal of Applied Physics, 2006

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Interpolating function of the strain relief of epitaxial quantum dots via an alternative morphological descriptor

Daniele Scopece

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Optimization of dot layer periodicity through analysis of strain and electronic profile in vertically stacked InAs/GaAs Quantum dot heterostructure

Saurabh Upadhyay

Journal of Alloys and Compounds, 2018

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Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs

V. Chaldyshev

Semiconductors, 2009

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Assembling strained InAs islands by chemical beam epitaxy

Ivan Maximov

Solid-state Electronics, 1996

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Theoretical analyses of the elastic and electronic properties of InAs QDs and QD-in-WELL structures grown on GaAs high index substrates

Mouna Bennour

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Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots

Belita Koiller

Physical Review B, 2003

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Postgrowth intermixing of strain engineered InAs/GaAs quantum dots

Bouraoui ILAHI

2014

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Competition between strain-induced and temperature-controlled nucleation of InAs/GaAs quantum dots

Brian Abbey

Journal of Applied Physics, 2004

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