20-Gb/s integrated DBR laser-EA modulator by selective area growth for 1.55-μm WDM applications (original) (raw)

Single-ridge waveguide electroabsorption-modulated DFB laser for 2.5Gb/s transmission

2000

In this paper we proposed a single ridge waveguide electroabsorption modulated distributed feedback laser (EML) for long-haul high-speed optical fiber communication system. This EML was successfully fabricated by two step metal organic vapor phase epitaxy (MOVPE) including selective area growth (SAG) and helium partially implantation. No obvious changes of the threshold current (< 0.2 mA), extinction ratio (< 0.1 dB), output power (< 0.2 dBm) and isolation resistance were achieved in the preliminary aging test. With 2.5 Gb/s NRZ modulation, no power penalty was observed after the optical signal was transmitted through 280 Km normal single mode fiber.

25 Gb/s Data Transmission Using a Directly Modulated InGaAlAs DBR Laser over 14 nm Wavelength Tuning Range

Photonics

With the deployment of the fifth generation of mobile networks (5G), 25 and 100 Gb/s directly modulated lasers and modules will become the mainstream optical transmitters. A directly modulated InGaAlAs/InP distributed Bragg reflector (DBR) laser is fabricated by butt-joint technology. A 25 Gb/s data transmission over a single-mode fiber of up to 10 km is demonstrated, and a wavelength tuning range of 14.28 nm is achieved through injection current tuning of a DBR section and temperature control of a thermoelectric cooler (TEC), which is the best candidate of colorless light sources for wavelength-division-multiplexed passive optical network (WDM-PON) systems.