Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon (original) (raw)

On the role of surface plasmon polaritons in the formation of laser-induced periodic surface structures upon irradiation of silicon by femtosecond-laser pulses

Journal of Applied Physics, 2009

The formation of nearly wavelength-sized laser-induced periodic surface structures (LIPSS) on single-crystalline silicon upon irradiation with single or multiple femtosecond (fs) laser pulses (pulse duration τ = 130 fs, central wavelength λ = 800 nm) in air is studied experimentally and theoretically. In our theoretical approach, we model the LIPSS formation by combining the generally accepted first-principle theory of Sipe and co-workers with a Drude model in order to account for transient intra-pulse changes of the optical properties of the material due to the excitation of a dense electron-hole plasma. Our results are capable to explain quantitatively the spatial periods of the LIPSS being somewhat smaller than the laser wavelength, their orientation perpendicular to the laser beam polarization and their characteristic fluence dependence. Moreover, evidence is presented that surface plasmon polaritons play a dominant role during the initial stage of near-wavelength sized periodic surface structures in fs laser irradiated silicon and it is demonstrated that these LIPSS structures can be formed in silicon upon irradiation by single fs laser pulses.

Rippled area formed by surface plasmon polaritons upon femtosecond laser double-pulse irradiation of silicon: the role of carrier generation and relaxation processes

Applied Physics A, 2013

The formation of laser-induced periodic surface structures (LIPSS, ripples) upon irradiation of silicon with multiple irradiation sequences consisting of femtosecond laser pulse pairs (pulse duration 150 fs, central wavelength 800 nm) is studied numerically using a rate equation system along with a two-temperature model accounting for one-and twophoton absorption and subsequent carrier diffusion and Auger recombination processes. The temporal delay between the individual equal-energy fs-laser pulses was varied between 0 and ∼ 4 ps for quantification of the transient carrier densities in the conduction band of the laser-excited silicon. The results of the numerical analysis reveal the importance of carrier generation and relaxation processes in fs-LIPSS formation on silicon and quantitatively explain the two time constants of the delay dependent decrease of the Low-Spatial-Frequency LIPSS (LSFL) area observed experimentally. The role of carrier generation, diffusion and recombination are quantified individually.

Investigation of the possibility of surface plasmon polariton excitation on Si surface by femtosecond laser pules for periodic surface structure formation

arXiv (Cornell University), 2013

The mechanisms of ripple formation on silicon surface by femtosecond laser pulses are investigated. We demonstrate the transient evolution of the density of the excited free-carriers. As a result, the experimental conditions required for the excitation of surface plasmon polaritons are revealed. The periods of the resulting structures are then investigated as a function of laser parameters, such as the angle of incidence, laser fluence, and polarization. The obtained dependencies provide a way of better control over the properties of the periodic structures induced by femtosecond laser on the surface of a semiconductor material.

Towards a control over periodic surface structures induced by ultrashort laser pulses on the surface of a silicon target

The mechanisms of ripple formation on silicon surface by femtosecond laser pulses are investigated. We demonstrate the transient evolution of the density of the excited carriers and temperature evolution. As a result, the experimental conditions required for the excitation of surface plasmon polaritons are revealed. The periods of the resulting structures are then investigated as a function of laser parameters, such as the angle of incidence, laser fluence, and polarization. The obtained dependencies provide a way of better control over the properties of the periodic structures induced by femtosecond laser on the surface of a semiconductor material.

Feedback-Driven Plasmonic-Thermal Route to Femtosecond-Laser-Induced Periodic Surface Structures in Silicon Indicated by Pump-Probe Scattering and Diffraction

Surfaces

The self-organized formation of nanoscale laser-induced periodic surface structures (LIPSS) is still not fully understood with respect to the dynamics and interplay of contributing complex mechanisms. The transition from randomness to order and the specific role of nano-feedback are of fundamental interest because of their general aspects. In our study, the very first steps of the surface reconfiguration are demonstrated by analyzing the topology of evolving nano-crater maps. The evolution of spatial frequencies and directional arrangement indicate a feedback-driven adaptation of k-vectors to the required excitation conditions of elementary dipoles in the linearly polarized laser field. The time-dependent structure formation was studied by pump-probe diffraction and scattering experiments. The ratio of the contributions of characteristic light patterns enables plasmonic and non-plasmonic mechanisms to be distinguished, which subsequently act at distinctly different time scales. Rece...

Application of a two-temperature model for the investigation of the periodic structure formation on Si surface in femtosecond laser interaction

2011

We consider the case of surface irradiation by a small number of femtosecond laser shots leading to the formation of surface ripples. To explain this effect, we propose a numerical model that accounts for the following processes: (i) interference of the laser irradiation with an electromagnetic surface wave propagating on a silicon sample; (ii) free carrier formation and laser energy absorption; (iii) energy relaxation and electron-phonon coupling. We perform numerical calculations taking into account the interference of a surface wave with laser; and present the obtained simulation results in order to explain formation mechanisms of the experimentally observed patterns.

Periodic surface structure creation by UV femtosecond pulses on silicon

2017

Laser-induced periodic surface structures are created on Si (100) and Si (111) wafers by 500 fs laser pulses at 248 nm. The periodic structure is concentric and highly regular. The spatial period is consistently varying between 1.1 μm and 3.3 μm in the radial direction. It is shown that the fluence of the irradiation at the same pulse number determines the size of the area where the periodic structure is created and for the same fluence the pulse number determines the regularity of the created grooves by melting processes. The origin of this structure is identified as the inhomogeneity of the laser beam profile caused by Fresnel diffraction close to the focal plane. Further improvement of the formation of periodic structure with femtosecond laser pulses is suggested.