Direct growth of CuO/ITO nanowires by the vapor solid oxidation method (original) (raw)
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Applied Surface Science, 2010
CuO nanowires have been synthesized by heating a Cu foil in an ambient condition. The diameters of nanowires can be controlled by changing the annealing temperature. The morphology, composition, and structure were analyzed by using X-ray diffraction (XRD) and scanning electron microscope (SEM). To investigate the detailed layering structure of the substrates after oxidation, the cross-sectional analysis was also performed by using field emission-SEM and energy dispersive X-ray spectroscopy (EDX). The EDX measurements indicated that the CuO nanowires were grown on the CuO/Cu 2 O layer, which was formed on the surface of Cu foil.
Synthesis of cupric oxide nanowires on spherical surface by thermal oxidationmethod
Materials Letters, 2013
This study describes that CuO nanowires were synthesized by heating copper powder in air. CuO nanowires can grow on the surface of the spherical CuO/Cu 2 O. The samples were heated in the air within the temperature range from 300 1C to 700 1C. The diameter and density of nanowires can be controlled by the heating temperature and time. The products were examined by XRD, SEM and TEM. The morphology, composition, and crystal structure show that the single crystalline CuO nanowires can be synthesized on the surface of the spherical CuO/Cu 2 O and CuO was the only product when the sample was heated at the temperature of 500 1C and higher.
The Synthesis of Highly Aligned Cupric Oxide Nanowires by Heating Copper Foil
Journal of Nanomaterials, 2011
We have investigated the effects of grain size and orientation of copper substrates for the growth of cupric oxide nanowires by thermal oxidation method. Long, less-roughness, high-density, and aligned cupric oxide nanowires have been synthesized by heating (200) oriented copper foils with small grain size in air gas. Long and aligned nanowires of diameter around 80 nm can only be formed within a short temperature range from 400 to 700°C. On the other hand, uniform, smooth-surface, and aligned nanowires were not formed in the case of larger crystallite size of copper foils with (111) and (200) orientation. Smaller grain size of copper foil with (200) orientation is favorable for the growth of highly aligned, smooth surface, and larger-diameter nanowires by thermal oxidation method.
Formation of CuO nanowires on Cu foil
Chemical physics letters, 2004
Cupric oxide, CuO, has many interesting properties. It has a monoclinic crystal structure, and is a p-type semiconductor with a narrow band gap (1.2 eV) [1]. It is also a Mott insulator (3d transition metal monoxide), the electronic structures of which cannot be simply described within the ...
Thermal Oxidation of Copper for Favorable Formation of Cupric Oxide (CuO) Semiconductor
IOSR Journal of Applied Physics, 2013
Thermal oxidation of copper has been restudied to control the formation of photovoltaic active cupric oxide (CuO) phase against the cuprous oxide (Cu 2 O) phase. It has been established that the thermal oxidation of copper is governed by the outward lattice diffusion and grain boundary diffusion of copper ions at the interface. The lattice diffusion favors the formation of Cu 2 O phase whereas grain boundary diffusion favors the formation of CuO phase. In the present work, a fine copper powder is taken as starting material for thermal oxidation to increase the grain boundary diffusion and to study its on phase formation. Further, to suppress the grain boundary diffusion the starting material is chemically passivated with diethylenetriamine and olelamine to chameically passivated the surface defects. Thermal oxidation of these pre-treated materials is carried out in open air at temperature 500 o C and 700 o C to study the phase formation. The resulting materials are characterized by x-ray diffraction and scanning electron microscopy. These studies clearly confirm that grain boundary diffusion or defect mediated diffusion due to small particle size and more surface atoms of copper favor the formation of CuO at low temperature in case of pure copper, whereas the chemical passivation and high temperature heating favours the formation of Cu 2 O phase and hence the resulting material is biphasic. Hence, the present study is useful information in controlling the phase formation of copper oxide to obtain more photoactive material that is CuO.
Potentiostatic deposition and characterization of cuprous oxide films and nanowires
Journal of Crystal Growth, 2005
Potentiostatic deposition of cuprous oxide (Cu 2 O) nanowires in polycarbonate membrane by cathodic reduction of alkaline cupric lactate solution has been investigated. These nanowires, characterized by scanning electron microscopy, have uniform diameters of about 100 nm and lengths up to 16 mm. The electrochemical quartz crystal microbalance (EQCM) is used for in situ phase analysis measurements of the thin films, and the phase composition is determined by X-ray diffraction analysis. The electrochemical parameter limits for the deposition of nanowires are reported. The nanowires have been confirmed as crystalline Cu 2 O by powder X-ray diffraction, electronic nanodiffraction and energy dispersive X-ray spectroscopy.
Synthesis and Characterization of CuO Nanowires
2006
Synthesis of copper oxide nanowires was done heating up copper wires in wet ambient air at 400 and 500degC. The existence of nanowires was confirmed by SEM images and EDX spectroscopy. Nanowires were not formed in nitrogen ambient. The diameters of synthesized nanowires are between 30 to 160 nm and lengths up to 39 mum. SEM image shows that CuO nanowires were formed on top of the oxide grains. Vapor-solid growth mechanism is also suggested for the growth of this nanowire.
Nanomaterials, 2020
Size distribution, Young’s moduli and electrical resistivity are investigated for CuO nanowires synthesized by different thermal oxidation methods. Oxidation in dry and wet air were applied for synthesis both with and without an external electrical field. An increased yield of high aspect ratio nanowires with diameters below 100 nm is achieved by combining applied electric field and growth conditions with additional water vapour at the first stage of synthesis. Young’s moduli determined from resonance and bending experiments show similar diameter dependencies and increase above 200 GPa for nanowires with diameters narrower than 50 nm. The nanowires synthesized by simple thermal oxidation possess electrical resistivities about one order of magnitude lower than the nanowires synthesized by electric field assisted approach in wet air. The high aspect ratio, mechanical strength and robust electrical properties suggest CuO nanowires as promising candidates for NEMS actuators.
Vertically Aligned CuO Nanometre Scale Wires Synthesized by Thermal Oxidation in Atmospheric Air
2014
In this study vertically aligned copper oxide (CuO) nanometre scale wires were synthesized via two thermal oxidation techniques. The first involved the direct heating of an oxygen free copper substrate on a commercial hotplate at 300 ºC, while second technique involved heat treating a similar copper substrate in a tube furnace over the temperature range from 400 ºC to 600 ºC. Both heat treatments were carried out in atmospheric air without the use of any catalysts. The as-grown CuO wires formed using this facile thermal oxidation were found to have high aspect ratios, mechanically stable and firmly attached to the underlining oxide layer. The size, shape, morphology and composition of the wires were investigated using advanced characterisation techniques such as transmission electron microscopy, field emission scanning electron microscopy and X-ray diffraction.