Design of Class AB Power Amplifier for RADAR Applications (original) (raw)

Development of a GaN HEMT class-AB power amplifier for an envelope tracking system at 2.45 GHz

2010

A class-AB power amplifier was designed for an envelope tracking (ET) application. Class-AB amplifier is widely used in wireless communication systems due to the compromise between linearity and efficiency. As a power device, Cree Gallium Nitride High Electron Mobility Transistor (GaN HEMT) CGH4010F was chosen. The input and output matching networks were designed and simulated with Advanced Design System (ADS). After some optimization, the amplifier was fabricated using a Rogers RT/Duroid 5880 substrate. The amplifier together with a MAX2247 preamplifier as a driver was measured. A good agreement between the simulation and measurement results was observed. The maximum power added efficiency (PAE) is around 50 percents with the supply voltage Vsup= 10V and the maximum drain efficiency is around 75 percents with Vsup= 5V. An output power up to 42 dBm and good linearity of the output voltage with respect to the supply voltage in the range 0≪Vsup≪20V were achieved. Thus, the amplifier i...

Design and analysis of class AB RF power amplifier for wireless communication applications

2002

The Power Amplifier is the most power-consu!}ling. blpqk among the quil~ing blocks of RF transceivers. It is still a difficult problem to design power amplifiers, especially for linear, low voltage operation. Until now power amplifiers for wireless applications is being produced almost in GaAs processes with some exceptions in LDMOS, Si BJT, and SiGe HBT. The submicron CMOS processes for power amplifiers are under research focus since CMOS offers integration for power amplifier with rest of the transceivers blocks due to its high yield. Also CMOS process is cheap. This thesi.s report details the design process of a class AB power amplifier for GSM wireless applications using 0.35 μm CMOS process. The transmit frequency for GSM-1800 standard for handset applications is 1710 MHz 1785 MHz. The power amplifier has been designed to deliver 2 W of minimum output power into a 50 Q load. The circuit-was designed and simulations indicated a peak power added efficiency of 47 %.

High Power Two- Stage Class-AB/J Power Amplifier with High Gain and Efficiency

Journal of Academic and Applied Studies, 2014

This paper presents a hybrid Broadband power amplifier which provides high drain efficiency. AB and J, Two Classes of power amplifier are described using GaN HEMT with matching networks together with input and output compact elements. Using Load Pull method, the best input and output network in the central frequency of 3GHz for output power of 40dBm, 10dB high gain and high efficiency of 80%, has been designed. After describing the design of each of the amplifiers and comparing their performance, the proposed circuit, two-class AB/J are discussed to be the target of the circuit design, reducing the input power to achieve high efficiency output power and gain. Input and output matching proposed circuit elements in terms of theory and simulation are compared, and the results of both investigations were similar. Also, the fundamental harmonic and the second harmonic in the 0.5GHz bandwidth have the desirable amplitude of the output signal.

A band selecting UHF class-AB GaN power amplifier with 40 dBm output power

2013

A BAND SELECTING UHF CLASS-AB GaN POWER AMPLIFIER WITH 40 dBm OUTPUT POWER Sinan Alemdar M.S. in Electrical and Electronics Engineering Supervisor: Prof. Dr. Abdullah Atalar July, 2013 Ultra High Frequency (UHF) band is used for GSM communication, satellite systems, television broadcast, frequency hopping radios, software defined radios using advanced digital modulations. Each and every application would require various specifications and these modern applications require various frequency bands. In this work, a band selecting uhf class-ab GaN power amplifier with 40 dBm output power is built using a GaN-HEMT transistors and PIN diodes. The power amplifier can be tuned in 1350MHz–2700MHz one-octave frqeuency band, has a maximum gain of 17dB, and a maximum saturated output power of 41 dBm.

Design of a 2 GHz GaAs HBT-based Class-E power amplifier

This paper presents a design procedure for the GaAs HBT-based Class-E power amplifier for 2 GHz. An empirical approach, based on load-pull and source-pull sim- ulations has been used to find an optimal impedance point for high efficiency operation. The simulation results show that a single-stage single-ended Class-E PA can achieve PAE higher than 70 %, output power of 24 dBm and transducer power gain of 15 dB when driven from a standard 50 Ohm signal generator. Three different solutions for the imple- mentation of the load network are discussed, including both lumped and distributed components. designed and implemented in various technologies and in different frequency bands. In many papers it is shown how the circuit deviates from its nominal operation when dif- ferent kinds of non-ideal effects are taken into account. These effects include finite-inductance DC-feeding coil, finite Q-factor of the load network, non-zero fall time of the collector/drain current, variations in duty c...

Design of Broadband, High-Efficiency, and High-Linearity Gan Hemt Class-J RF Power Amplifier

Progress In Electromagnetics Research C, 2017

In this paper, the design of a broadband, high-efficiency, and high-linearity Class-J GaN HEMT RF power amplifier (PA) over 1.6-2.6 GHz is explained. The source impedance is conjugatematched to the input impedance of the device resulted from small signal simulation to make a high-gain power amplifier. The load impedance related to the maximum power added efficiency (PAE) and maximum output power is obtained by pulling the only fundamental and second harmonic components over frequency bandwidth. Thus, not only a high-efficiency PA but also a high-linearity PA is formed. The input and output matching networks are implemented by microstrip transmission lines. The theoretical PA designed is optimized using computer-aided simulations. The fabricated PA provides output power in the range of 38-39.9 dBm with 60%-73% PAE and 15-16.3 dB power gain across the band. The worst measured ACLR1 as the PA is fed by the CDMA signal with 1.2288 MHz bandwidth is at a level of −38.6 dBc. A close agreement between the measured and simulation results is observed due to the use of high-order harmonic balance simulator and high-accuracy implementation procedure.

On the Design of Class-J Microwave Power Amplifier

The Scientific Bulletin of Electrical Engineering Faculty, 2019

Due to the ISM band being unlicensed for communication applications, a lot of applications have been developed in this band and a good example is WiFi IEEE802.11a, b, g, n of Bluetooth. This numeracy of applications motivated this paper. The paper is concerned with the design of a low distortion 20dBm 2.4GHz class-J power amplifier (PA) since PAs are indispensable in radio communications. The design is based on the AVAGO ATF-52189 transistor with a transition frequency of 6GHz. The design is done as a hybrid circuit network realized using microstrip elements and surface mount device (SMD) capacitors. The schematic design, and simulation are carried out using Keysight’s Advanced Design System version 2016.01. The simulated PA exhibited a drain efficiency of 69% and a power output of21dBm.

A High Efficiency Class AB AlGaN/GaN HEMT Power Amplifier for High Frequency Applications

Medicon Engineering Themes

GaN HEMT is chosen for many high frequency applications such as Power Amplifiers because of its desirable properties. Most semiconductors fail at high frequency applications because of their thermal and bias limitations. It's very difficult to operate the amplifier at high frequency and high power ratings. The HEMT transistors can operate at high electric fields and high frequencies. The heterojunction structure provides more no of free electrons without any doping which significantly improves the mobility and the current. The heterostructure also blocks the current flow in unwanted directions. This paper explains about GaN HEMT transistor and its practical application as a Power Amplifier. CREE CGH40010F GaN (10 W) device is chosen and developed at the schematic level. The schematic provides 15.5 dB gain and 66% efficiency.

High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology

IEEE Transactions on Microwave Theory and Techniques, 2003

A 36-dBm high-linearity single-ended commonsource class-B monolithic-microwave integrated-circuit power amplifier is reported in GaN high electron-mobility transistor technology. We also describe the design and simulation of highly linear and highly efficient common-source and common-drain class-B power amplifiers. Single-ended class-B amplifiers with bandpass filtering have equivalent efficiency and linearity to push-pull configurations. The common-source class-B circuit demonstrates high linearity, greater than 35 dBc of third-order intermodulation (IM3) suppression and high power-added efficiency (PAE) of 34%. Simulations of common-drain class-B designs predict a PAE of 54% with a superior IM3 suppression of more than 45 dBc over a wider range of bias due to the strong series-series negative feedback offered by the load resistance.

GaN HEMT power amplifier design for 2.45 GHz wireless applications

SAIEE Africa Research Journal

Electronic devices with high performances like Power Amplifiers (PA) are very important for Wireless communications. This paper proposes a design of a class AB power amplifier operating at 2.45 GHz, in the S-band frequency. The Cree's CG2H40045F GaN HEMT (High Electron Mobility Transistor) is used for this design. The Gallium Nitride (GaN) technology has been chosen in light of its advantageous properties such as high breakdown voltage, high band gap, as well as high thermal conditions. The paper investigates the different design trade-offs for finding a good balance between various key parameters of the PA (linearity, efficiency, and gain). A design approach has been proposed and the microstrip lines based on the Smith Chart tool available in ADS software have been used for the matching process. The class AB was selected to reach a good agreement between linearity and efficiency, provided by this class. After various process applications from DC characterization to simulations, the proposed design achieves a power added efficiency more than 50% at power saturation with a gain of 15 dB in schematic simulation. The layout dimensions are 55.5 x 64.45 mm 2 on PCB technology.