Growth and structural properties of indium sesquitelluride (In2Te3) thin films (original) (raw)
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Electrical and optical properties of Indium sesquitelluride (In2Te3) thin films
Journal of Materials Science, 2006
Indium sesquitelluride (In 2 Te 3 ) thin films were grown on glass substrates using a flash evaporation technique. The nature of contact phenomena of Ag, Sn, In, Zn, Al-(p) In 2 Te 3 junctions had been investigated. Ag, Sn, In and Zn metals were found to provide ohmic contact for In 2 Te 3 thin films. The variation of DC-electrical resistivity of In 2 Te 3 thin films with temperature was studied at different substrate temperatures. The optical measurements revealed that the flash evaporated In 2 Te 3 thin films possessing direct energy band-gap. The variation of optical energy gap with substrate temperature was investigated. Film thickness, substrate temperature, composition and crystallinity were found to determine the optimization of electrical and optical properties of In 2 Te 3 thin film.
Structural analysis of indium sulphide thin films elaborated by chemical bath deposition
Thin Solid Films, 2005
X-ray diffraction and scanning electron microscopy show that the crystalline state of indium sulphide thin films, elaborated by chemical bath deposition technique on various substrates, is strongly affected by deposition parameters (deposition time t D , pH solution and thioacetamide concentration), as well as by annealing treatment. We show that h-In 2 S 3 thin films grown on glass substrate during t D = 60 min, and annealed under nitrogen at 400 jC during 1 h are well crystallized according to the cubic structure with the preferential orientation (610). They have a good homogenity and crystallinity.
Synthesis and physical behaviour of In2S3 films
Applied Surface Science, 2008
In 2 S 3 layers have been grown by close-spaced evaporation of pre-synthesized In 2 S 3 powder from its constituent elements. The layers were deposited on glass substrates at temperatures in the range, 200-350 8C. The effect of substrate temperature on composition, structure, morphology, electrical and optical properties of the as-grown indium sulfide films has been studied. The synthesized powder exhibited cubic structure with a grain size of 63.92 nm and S/In ratio of 1.01. The films grown at 200 8C were amorphous in nature while its crystallinity increased with the increase of substrate temperature to 300 8C. The films exhibited pure tetragonal b-In 2 S 3 phase at the substrate temperature of 350 8C. The surface morphological analysis revealed that the films grown at 300 8C had an average roughness of 1.43 nm. These films showed a S/In ratio of 0.98 and a lower electrical resistivity of 1.28 Â 10 3 V cm. The optical band gap was found to be direct and the layers grown at 300 8C showed a higher optical transmittance of 78% and an energy band gap of 2.49 eV.
Crystalline indium sesquitelluride nanostructures: synthesis, growth mechanism and properties
In the present work, we report for the first time the growth of uniform single crystalline In 2 Te 3 nanowires via the chemical vapor deposition (CVD) method. The CVD grown In 2 Te 3 nanowires are single crystals along [132] growth direction with a uniform diameter of around 150 nm and an average length of tens of microns. In addition, polycrystalline hierarchical nanostructures of In 2 Te 3 are also fabricated via a solvothermal method under low temperature conditions. The morphology and crystal structures are systematically studied using SEM and TEM. Optical characterization by Raman spectroscopy provides further information of the achieved products, and UV-vis spectroscopy helped to investigate the bandgap of these nanostructures. By surfactant and solvent effects, the morphologies of the nanostructure are controllable. The electrical properties of the two kinds of nanowire are compared. The morphology controllable nanostructure offers the possibility of controlling the properties of In 2 Te 3 and this opens up new means for achieving high performance nanodevices based on these nanostructures.
Preparation and characterization of indium selenide thin films from a chemical route
Materials Chemistry and Physics, 2005
Onto amorphous glass substrates, indium sulfide (In 2 S 3 ) thin films have been successfully deposited using versatile and simple successive ionic layer adsorption and reaction (SILAR) method. These films are characterized by structural, optical and electrical measurement techniques. Uniform distribution of grains is clearly noted from the photograph of scanning electron microscope (SEM). Cubic structure with amorphous nature of films is reported. The optical band gap of In 2 S 3 thin films is estimated to be 2.3 eV. Films were highly resistive possesses resistivity of the order of 10 5 cm.
Fabrication and characterization of In2S3 thin films deposited by thermal evaporation technique
Thin Solid Films, 2005
Indium sulphide, In 2 S 3 , thin films present an alternative to conventional CdS films as buffer layer for CIS-based thin film solar cells. The objective is to eliminate toxic cadmium for environmental reasons. Indium sulphide is synthesized and deposited by single source vacuum thermal evaporation method on glass substrates. The films are analyzed by X-ray diffraction (XRD) and spectrophotometric measurements. They have a good crystallinity, homogeneity and adhesion. The X-ray diffraction analysis confirmed the initial amorphous nature of the deposited InS film and phase transition into crystalline In 2 S 3 formed upon annealing at free air for 250 8C substrate temperature for 2 h.
A novel method for preparing α-In2Te3 polycrystalline thin films
Materials Chemistry and Physics, 1999
Indium telluride In 2 Te 3 polycrystalline thin ®lms of different thicknesses were prepared using sequential thermal evaporation of In and Te layers on glass and SnO 2 coated glass substrates held at room temperature. The post-deposition annealing was performed in an argon or a nitrogen atmosphere at different temperatures and for several durations. The in¯uence of the annealing conditions on the ®lm structure was investigated. The characterization of the ®lms was made by X-ray diffraction, electron microprobe analysis, X-ray photoelectron spectroscopy, scanning electron microscopy, Raman scattering and optical transmission. We show that annealing at a temperature of 663 K for 30 min leads to monophased and homogeneous-In 2 Te 3 thin ®lms.
Post-deposition annealing effect on In2S3 thin films deposited using SILAR technique
Materials Science in Semiconductor Processing, 2007
Indium Sulfide thin films have been deposited on glass substrate using a simple and inexpensive technique viz., successive ionic layer adsorption and reaction (SILAR). The films are characterized using X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and optical absorption techniques. Samples are prepared by varying dipping and rinsing time, and those prepared at room temperature are found to be amorphous in nature. However, peaks corresponding to bIn 2 S 3 are observed, on annealing at 400 1C. Grain size is found to increase with increase in the dipping times, either in the precursor solutions or in water. Band gap decreases considerably for samples annealed at 400 1C in vacuum.
Materials Today: Proceedings, 2020
Indium sulfide (In2S3) films were deposited onto soda lime glass by sulfurization assisted thermal evaporation method at different sulfurization temperatures. These films are further annealed for 1 hr at 300 °C. The structural, morphology and optical properties of these films are studied using x-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive x-ray analysis (EDAX), Raman and UV–Visible spectroscopy. Low angle-XRD analysis revealed that all films are polycrystalline in nature and confirmed the formation of only cubic phase of In2S3. The FE-SEM and EDAX analysis revealed significant change in the film morphology and composition upon sulfurization and annealing temperature. UV–Visible spectroscopy analysis showed that all films have strong absorption in visible region of the spectrum. With increase in sulfurization and annealing temperature the band gap increases and is found in the range 1.57–2.12 eV. However, band gap of In2S3 thin films...
Structural and Optical Properties of Indium Sulfide Thin Films Prepared by Silar Technique
The Open Condensed Matter Physics Journal, 2009
Indium sulfide thin films were prepared using a relatively new, simple and inexpensive technique called Successive Ionic Layer Adsorption and Reaction (SILAR). SILAR deposition conditions for obtaining good quality -Indium sulfide (In 2 S 3 ) films were optimized. The films were structurally and optically characterized using X-ray diffraction (XRD), photosensitivity measurements and optical absorption studies. Effects of using different precursor solutions, indium chloride (InCl 3 ) and indium nitrate (In(NO 3 ) 3 ) and post deposition annealing were also studied. Films fabricated with In(NO 3 ) 3 showed good crystallinity without any post deposition annealing while films prepared using InCl 3 were crystalline only when annealed at 400 0 C. The band gap of the films varied from 2.32 to 2.92 eV depending on the deposition conditions.