The influence of InGaP barrier layer on the characteristics of 1.3 μm strain-compensated multiquantum-well InAsP/InP/InGaP laser diodes (original) (raw)
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MOCVD growth of strained multiple quantum well structure for 1.3 μm InAsP/InP laser diodes
Solid-State Electronics, 1999
In this article, we describe the growth and characterization for 1.3 mm InAsP/InP strained multiple quantum well (SMQW) laser diodes (LDs) with separate con®nement heterostructure grown at 5808C by metalorganic chemical vapor deposition. The grown strained single quantum well (SSQW) stack and strained multiple quantum well (SMQW) structures are characterized using double-crystal X-ray diraction and photoluminescence (PL) to con®rm the structural and optical qualities for practical device applications. The InAsP/InP SSQW stack grown at 5808C appears to be extremely abrupt, uniform, free of mis®t dislocations and narrow PL half width. Although the InAsP/ InP SMQWs grown at 5808C maintain its structural integrity throughout the deposition sequence, the slightly broader PL half width for InAsP/InP SMQW structure is attributed to the dislocations resulted from a large net strain. Laser emission can be achieved by using the InAsP/InP SMQWs and the lasing wavelength is in a good agreement with our designed structure. The experimental data of broad-area and ridge waveguide LDs are described in detail. #
Journal of Crystal Growth, 1998
InGaAsP/InP strained and strain-compensated multi-quantum wells grown by low pressure metalorganic chemical vapor deposition for fabricating 1.3 m lasers were characterized by double crystal X-ray diffraction, transmission electron microscopy, atomic force microscopy, cathodoluminescence, and photoluminescence. The quantum wells were compressively strained at 1.14% or 2.55%. Strain-compensated structures were obtained by using appropriately tensile-strained barriers so that the net strain of the multi-quantum well region is approximately zero. It is observed that the sample which had a strain of 2.55% in the wells and which was strain-compensated showed the poorest structural and optical quality. Also, the sample which had a strain of 2.55% and uncompensated showed an inhomogeneous layer growth compared to the sample which had a strain of 1.14%. The results also showed that a quantum well strain of 1.14% can be compensated without affecting the structural and optical quality of the layers.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2002
In this article, we report the fabrication and analysis of 1.3 μm InAsP multiquantum well laser diodes (MQW LDs) with the n-type modulation-doped (MD) InAsP/InP/InGaP active region grown by metalorganic chemical vapor deposition. We theoretically analyze the threshold current density, differential quantum efficiency, internal quantum efficiency, and internal optical loss as a function of thickness and doping concentration of n-type Si-doped InGaP barrier and InP intermediate layer for the 1.3 μm MD-MQW LDs. The optimum thickness is 2 nm for the n-type doped barrier and 6.2 nm for the doped intermediate layer while remaining 4.4-nm-thick undoped in the InP intermediate layer to prevent from lateral diffusion of Si-doped atoms into the InAsP well. Besides, the optimum doping concentration of doped InGaP barrier and doped InP intermediate layer is 1×1018 cm−3. With these optimum conditions, the LDs will reduce the threshold current density and threshold gain to 0.8 kA/cm2 and 43.08 cm−...
High-Performance Strain-Compensated InGaAs–GaAsP–GaAs ( = 1:17 m) Quantum-Well Diode Lasers
This letter reports studies on highly strained and strain-compensated InGaAs quantum-well (QW) active diode lasers on GaAs substrates, fabricated by low-temperature (550 C) metal-organic chemical vapor deposition (MOCVD) growth. Strain compensation of the (compressively strained) InGaAs QW is investigated by using either InGaP (tensile-strained) cladding layer or GaAsP (tensile-strained) barrier layers. High-performance = 1 165 m laser emission is achieved from InGaAs-GaAsP strain-compensated QW laser structures, with threshold current densities of 65 A/cm 2 for 1500-m-cavity devices and transparency current densities of 50 A/cm 2 . The use of GaAsP-barrier layers are also shown to significantly improve the internal quantum efficiency of the highly strained InGaAs-active laser structure. As a result, external differential quantum efficiencies of 56% are achieved for 500-m-cavity length diode lasers.
Journal of Crystal Growth, 2001
Strain compensated 1.3 mm InAsP/InGaAsP laser structures have been grown by using gas source MBE and the ridge waveguide laser diodes have been fabricated. The temperature characteristics of those laser chips have been investigated in detail. The ridge type laser chips show threshold current about 10 mA at room temperature, with slope efficiency greater than 0.35 W/A/un-coated facet. The characteristic temperature of the threshold current were greater than 90 K from 258C to 908C. The spectral and far field characteristics of those laser chips also have been investigated.
Applied Physics Letters, 1996
We have studied the effects of substrate misorientation on the growth of strained-layer In 0.18 Ga 0.82 As quantum well laser structures with InGaAsP confinement layers and In 0.5 Ga 0.5 P cladding layers lattice matched to a GaAs substrate. Low-temperature photoluminescence ͑PL͒ and atomic force microscopy ͑AFM͒ provide evidence of a strong substrate-orientation dependence of the interface structure. The surface morphology of the InGaAs quantum well is found to be determined primarily by the underlying InGaAsP confinement layer. Structures grown on exact-͑100͒ oriented substrates exhibit three-dimensional island surface morphology, whereas growths on ͑100͒ substrates oriented 2°towards ͓110͔ exhibit high surface roughness, possibly due to step bunching. These observations correlate well with previously reported device performance from strained quantum well laser diodes in the InGaAs/InGaAsP/InGaP material system, and can serve as a tool to optimize device performance.
Brazilian Journal of Physics, 1999
Zero-Net-Strained ZNS InGaAsP InGaAsP InP Multi Quantum Wells MQW structures grown by L o w Pressure Metalorganic Vapor Phase Epitaxy for 1.55m laser applications were investigated using atomic force microscopy, photoluminescence spectroscopy and X-ray di raction. The morphology exhibits a strong anisotropic and modulated behavior. The photoluminescence spectrum shows a broad emission band below the fundamental quantum well transition. The results indicate a strong in uence of the growth rate, growth temperature and barrier composition on the surface morphology, and on the optical and structural properties of the ZNS structures. Ridge wave-guide ZNS-MQW laser structures grown at optimized conditions exhibited excellent electro-optic characteristics with low threshold current and high e ciency.
Effect of p-doping profile on performance of strained multi-quantum-well InGaAsP-InP lasers
IEEE Journal of Quantum Electronics, 1996
Abstruct-Leakage of electrons from the active region of InGaAsP-InP laser heterostructures with different profiles of acceptor doping was measured by a purely electrical technique together with the device threshold current. Comparison of the obtained results with modeling data and SIMS analysis shows that carrier leakage of electrons over the heterobarrier depends strongly on the profile of p-doping and level of injection. In the case of a structure with an undoped p-claddinglwaveguide interface, the value of electron leakage current can reach 20% of the total pumping current at an injection current density of 10 kA/cm2 at 50 "C. It is shown that carrier leakage in InGaAsP-InP multi-quantum-well lasers can be minimized and the device performance improved by utilizing a p-doped separateconfinement-heterostructure layer.
Journal of Crystal Growth, 2000
Diode lasers with an emission wavelength of up to 1150 nm have been grown by metalorganic vapor-phase epitaxy (MOVPE). For the growth of the highly strained InGaAs/GaAs quantum wells low growth temperatures are found favorable to suppress defect formation. An incorporation of GaAsP strain compensating layers reduces indium carry-over e!ects but the defect formation in the InGaAs quantum well starts at lower indium content. At high TMIn/(TMIn#TMGa) ratio in the vapor phase no temperature dependence of indium incorporation e$ciency was obtained. Broad-area (1 mm long, 100 m wide) diode lasers using such QWs in GaAs waveguide and AlGaAs cladding layers show very low threshold current densities (jth"93 A/cm at 1102 nm and jth"85 A/cm at 1152 nm). Ridgewaveguide diode lasers (750 m long, 3 m wide) with a low threshold current of 9 mA and an e$ciency of more than 90% were fabricated.
Journal of The Electrochemical Society, 2006
We demonstrated a novel method to grow InGaAsP linear graded-index separate confinement heterostructure ͑GRINSCH͒ ͑ = 1.05-1.24 m͒ by ramping the growth temperature in the metallorganic chemical vapor deposition system. From secondary ion mass spectroscopy and photoluminescence analysis, the composition of linearly graded In 1−x Ga x As y P 1−y layer is well in control. By introducing this GRINSCH InGaAsP structure, 1.55-m SMQW ridge waveguide laser diodes with a back-facet high-reflection coating exhibit a low threshold current of 6.5 mA at 20°C, a high light output power of 20 mW at 80 mA, and a high slope efficiency of 0.37 mW/mA, also showing potential for high-temperature, continuous-wave operation up to 95°C. The longitudinal mode oscillates at 1.536 m at 20°C and the 0.45-nm/°C of red-shift rate in wavelength.