Comparison of approximate formulas for the capacitance of microstrip line (original) (raw)
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Microwave and Optical Technology Letters, 1992
An expression for the effective relative dielectric permittivity of microstrip transmission lines, derived empirically for X-band of frequency, is proposed for the computer-aided design (CAD) of micro-strips in higher microwave frequencies as well, by comparing with other CAD formulas. The accuracy and simplicity of the formula can demand priority in CAD technology. © 1992 John Wiley & Sons, Inc.
High accuracy formulas for calculation of the characteristic impedance of microstrip lines
IEEE Transactions on Microwave Theory and Techniques, 1995
An analytical formula for determination of the characteristic impedance of a microstrip line assuming the quasi-TEM mode of propagation is presented. The new form of the final formulas contains only integrals which can be numerically performed by means of the Gauss-Laguerre quadrature. The method can be applied to multilayer Lines and also to the case of anistropic dielectrics. By using some suitable conformal mappings the formulas obtained can be used to determine the characteristic impedance of some cylindrical microstrip lines. We have compared the results given by the proposed formulas with the finite analytical solution available in a particular case and also with results obtained by the substrip method. All the performed tests indicate that the proposed formulas are highly accurate and efficient relations for determining the characteristic impedance of microstrip lines.
IEEE Transactions on Electromagnetic Compatibility, 1994
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Abstract In this study, mutual capacitance and inductance between two coupled traces is measured and computed to validate and simplify coupling algorithms used in an expert system software package. The algorithm's applicability to common microstrip configurations is tested through comparisons between FEM based solutions, S 21 measurements and the algorithm solutions under several permutations of a test board.
Microwave and Optical Technology Letters, 2008
This paper has proposed a new completely integrated LC quadrature ILFD fabricated in the TSMC 0.35-m CMOS technology. The new ILFD uses no varactor to extend the locking range by varying the dc bias of the tail transistors in the ILFD. The locking range of the implemented ILFD is 2.92 GHz ϳ 4.26 GHz (41%). The measured phase noise of free-running ILFD is Ϫ118.3 dBc/Hz while the locked quadrature output phase noise is Ϫ126.7 dBc/Hz at 1 MHz offset frequency from the center oscillation frequency of 1.98 GHz, which is 8.4 dB lower than the free running ILFD.
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Numerical techniques have proven to be accurate and efficient in designing microstrip in microwave in monolithic integrated circuits (ICs) and interconnections in high speed digital ICs. In this paper, we apply the Finite Element Method (FEM) to design microstrip transmission lines on silicon substrate for microwave and digital IC in future wireless technology. We mainly focus on computing the capacitance per unit length for two types structures on silicon substrate: a single microstrip on two layer media (oxide and silicon substrate) and another with two microstrips, one microstrip interacts in oxide layer and the other on top of the oxide layer all above the silicon substrate. Also, we illustrate the potential distribution of the model.