The effect of recoiled oxygen on damage regrowth and electrical properties of through-oxide implanted Si (original) (raw)
1983, Nuclear Instruments and Methods in Physics Research
High dose (4-7.5 × 10 ~ cm-2) As implantations into p-type (100) Si have been carried out through a screen-oxide of thicknesses ~< 775 A and without screen oxide. The effect of recoiled O on damage annealing and electrical properties of the implanted layers has been investigated using a combination of the following techniques: TEM, RBS/MeV He + channeling, SIMS and Hall measurements in conjunction with chemical stripping and sheet resistivity measurements. The TEM results show that there is a dramatically different annealing behavior of the implantation damage for the through oxide implants (Case I) as compared to implants into bare silicon (Case II). Comparison of the structural defect profiles with O distributions obtained by SIMS demonstrated that retardation in the secondary damage growth in Case ! can be directly related with the presence of O. Weak-beam TEM showed that a high density of fine defect clusters ( ~< 50 A) were present both in Case I and Case II. The electrical profiles showed only 30% of the total As to be electrically active. The structural and electrical results have been explained by a model that entails As-O, Si-O and As-As complex formation and their interaction with the dislocations.
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