RBS analysis of ions implanted in light substrates exposed to hot plasmas laser-generated at PALS (original) (raw)

Radiation Effects and Defects in Solids, 2005

Abstract

Ge and Ta ion implantation of silicon and carbon substrates has been obtained at PALS Research Laboratory in Prague by using laser pulses of 400 ps duration, 438 nm wavelength, 10(14-16)W/cm(2) intensity. Substrates were exposed in vacuum at different distances from the target and at different angles with respect to the normal to the target surface. 'On line' measurements of

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