original ) (raw )Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays
Adam Craig
Applied Physics Letters, 2013
View PDFchevron_right
Derivation of 12-and 14-band k· p Hamiltonians for dilute bismide and bismide-nitride semiconductors
muhammad usman
View PDFchevron_right
Modelling of bandgap and band offset properties in III-N related heterostructures
Hilmi Ünlü
Superlattices and Microstructures, 2004
View PDFchevron_right
Valence band anticrossing in mismatched III‐V semiconductor alloys
J. Furdyna
physica status solidi c, 2007
View PDFchevron_right
Negative band gap bowing in epitaxial InAs/GaAs alloys and predicted band offsets of the strained binaries and alloys on various substrates
Alex Zunger
Applied Physics Letters, 2002
View PDFchevron_right
Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications
Jeff Hosea
Applied Physics Letters, 2012
View PDFchevron_right
Band structure parameters of the nitrides: The origin of the small band gap of InN
Pierre Carrier
AIP Conference Proceedings, 2005
View PDFchevron_right
Effects of strain on the band structure of group-III nitrides
Q. Yan
Physical Review B, 2014
View PDFchevron_right
Biaxial strain-modified valence and conduction band offsets of zinc-blende GaN, GaP, GaAs, InN, InP, and InAs, and optical bowing of strained epitaxial InGaN alloys
Alex Zunger
Applied Physics Letters, 2002
View PDFchevron_right
The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
zahida batool
Journal of Applied Physics, 2012
View PDFchevron_right
Structural and electronic properties of elastically strained InN/GaN quantum well multilayer heterostructures
Joseph Kioseoglou
physica status solidi (c), 2014
View PDFchevron_right
The effect of strain and spatial Bi distribution on the band alignment of GaAsBi single quantum well structure
Sultan Alhassan
Physica B: Condensed Matter, 2021
View PDFchevron_right
Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells
Habibe Durmaz , Theodore Moustakas
Applied Physics Letters, 2012
View PDFchevron_right
Highly Mismatched III-V Semiconductor Alloys Applied in Multiple Quantum Well Photovoltaics
Judy Rorison
IET Optoelectronics
View PDFchevron_right
Growth and properties of the dilute bismide semiconductor GaAs1−xBix a complementary alloy to the dilute nitrides
Angelo Mascarenhas
International Journal of Nanotechnology, 2008
View PDFchevron_right
Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance
Jeff Hosea
Thin Solid Films, 2008
View PDFchevron_right
Band-edge diagrams for strained IIIV semiconductor quantum wells, wires, and dots
Craig Pryor
Physical Review B, 2005
View PDFchevron_right
Bias dependent dual band response from InAs/Ga(In)Sb type II strain layer superlattice detectors
Jesús Rodriguez
Applied Physics Letters, 2007
View PDFchevron_right
Direct band gap InxGa1−xAs/Ge type II strained quantum wells for short-wave infrared p–i–n photodetector
Sfina Noureddine
Optical Materials, 2015
View PDFchevron_right
GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics
Judy Rorison
Scientific Reports
View PDFchevron_right
Monolithically Integrated InAsSb-Based nBnBn Heterostructure on GaAs for Infrared Detection
Ata Khalid
IEEE Journal of Selected Topics in Quantum Electronics
View PDFchevron_right
Valence band-anticrossing in GaP1−xBix dilute bismide alloys: giant bowing of the band gap and spin-orbit splitting energy
Judy Rorison
2019
View PDFchevron_right
Theoretical analysis of a proposed InAs/InAsSb heterojunction photodetector for mid-infrared (MIR) applications
Rajesh Kumar Lal
View PDFchevron_right
Electronic bands of III-V semiconductor polytypes and their alignment
Friedhelm Bechstedt
Physical Review B, 2012
View PDFchevron_right
Band alignment of B0.14 Al0.86 N/Al0.7 Ga0.3 N heterojunction
Theeradetch Detchprohm
Applied Physics Letters, 2017
View PDFchevron_right
Band engineering in dilute nitride and bismide semiconductor lasers
muhammad usman
2012
View PDFchevron_right
Study of valence-band intersublevel transitions in InAs/GaAs quantum dots-in-well infrared photodetectors
seyoum wolde
2014
View PDFchevron_right
Influence of growth direction and strain conditions on the band lineup at GaSb/InSb and InAs/InSb interfaces
Alessandra Continenza
Physical Review B, 1996
View PDFchevron_right
Impact of strain on the band offsets of important III-V quantum wells: InxGa1-xN/GaN, GaAs/InxGa1-xP and InxGa1-xAs/AlGaAs
Partha Bera
2014
View PDFchevron_right
Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions
Mauro Mosca
physica status solidi (a), 2007
View PDFchevron_right
An analytical model of a double-heterostructure mid-infrared photodetector
Rajesh Kumar Lal
View PDFchevron_right
Electronic band structure calculations for biaxially strained Si, Ge, and III–V semiconductors
Massimo Fischetti
Journal of Applied Physics, 2010
View PDFchevron_right
III-Nitride Nanostructures for Infrared Optoelectronics
Daniel Hofstetter
Acta Physica Polonica A, 2006
View PDFchevron_right
Theoretical study of optoelectronic properties of GaAs 1 − x Bi x alloys using valence band anticrossing model
Fridolin Nya
Infrared Physics & Technology, 2014
View PDFchevron_right