Nonlinear response of biased bilayer graphene at terahertz frequencies (original) (raw)

High field response of gated graphene at THz frequencies

We study the Fermi energy level dependence of nonlinear terahertz (THz) transmission of gated multi-layer and single-layer graphene transferred onto sapphire and quartz substrates. The two samples represent two limits of low-field impurity scattering: short-range neutral and long-range charged impurity scattering, respectively. We observe an increase in the transmission as the field amplitude is increased due to intraband absorption bleaching starting at fields above 8 kV/cm. This effect arises from a field-induced reduction in THz conductivity that depends strongly on the Fermi energy. We account for intraband absorption using a free carrier Drude model that includes neutral and charged impurity scattering as well as optical phonon scattering. We find that although the Fermi-level dependence in the monolayer and five-layer samples is quite different, both exhibit a strong dependence on the field amplitude that cannot be explained on the basis of an increase in the lattice temperature alone. Our results provide a deeper understanding of transport in graphene devices operating at THz frequencies and in modest kV/cm field strengths where nonlinearities exist.

Broadband Terahertz Modulation in Electrostatically-doped Artificial Trilayer Graphene

We report a terahertz optical modulator consisting of randomly stacked trilayer graphene (TLG) deposited on an oxidized silicon substrate by means of THz-Time Domain Spectroscopy (THz-TDS). Here, the gate tuning of the Fermi level of the TLG provides the fundamental basis for the modulation of THz transmission. We measured a 15% change in the THz transmission of this device over a broad frequency range (0.6-1.6THz). We also observed a strong absorption >80% in the time-domain signals and a frequency independence of the conductivity. Furthermore, unlike previous studies, we find that the underlying silicon substrate, which serves as a gate electrode for the graphene, also exhibits substantial modulation of the transmitted THz radiation under applied voltage biases.

Sub-THz Characterisation of Monolayer Graphene

Journal of Spectroscopy, 2014

We explore the optical and electrical characteristics of monolayer graphene by using pulsed optoelectronic terahertz time-domain spectroscopy in the frequency range of 325-500 GHz based on fast direct measurements of phase and amplitude. We also show that these parameters can, however, be measured with higher resolution using a free space continuous wave measurement technique associated with a vector network analyzer that offers a good dynamic range. All the scattering parameters (both magnitude and phase) are measured simultaneously. The Nicholson-Ross-Weir method is implemented to extract the monolayer graphene parameters at the aforementioned frequency range.

Strong nonlinear optical response of graphene in the terahertz regime

Applied Physics Letters, 2009

We demonstrate that within the model of massless Dirac fermions, graphene has a strong nonlinear optical response in the terahertz regime. It is found that the nonlinear contribution significantly alters both the single frequency and frequency tripled optical response at experimentally relevant field strengths. The optical activity of single layer graphene is significantly enhanced by nonlinear effects, and the frequency tripled response opens the gateway to photonic and optoelectronic device applications.

Terahertz harmonic generation in graphene

Applied Physics Letters, 2015

We show that charge carrier transport in graphene exhibit sharp resonances in the presence of spatially and temporarily modulated scattering. Resonances occur when the period of an applied a-c field corresponds to the time taken by quasi-ballistic carriers to drift over a spatial scattering period, provided the latter is shorter than the distance taken by carriers to emit an optic phonon. We show that such system can be achieved with interdigitated gates energized with an a-c bias on graphene layers. Gate separation and fields to achieve ballistic transport would result in resonances in the terahertz range, with the generation of higher harmonics characterized by large Q-factors, which are tunable with gate spacing.

Third-order terahertz optical response of graphene in the presence of Rabi Oscillations

2021

Graphene has been shown to exhibit a nonlinear response due to its unique band structure. In this paper, we study the terahertz (THz) response metallic armchair graphene nanoribbons, specifically current density and Rabi oscillations beyond the semiclassical Boltzman model. We performed quantum mathematical modeling by first finding a solution to the unperturbed Hamiltonian for a single Fermion in the dipole gauge and then applying a polarized, THz electrical field. After writing the solution in terms of the four eigenstates of the Dirac system, we numerically calculated the x and y components of the induced current density resulting from applying the terahertz electrical field. Due to the inclusion of the Rabi Oscillation in our calculation of the optical response, we predict both odd and even harmonics, as well as continuum oscillations of the power density spectrum in the THz regime. Lastly, we show a rapid decay of the power harmonics.

Terahertz graphene optics

Nano Research, 2012

The magnitude of the optical sheet conductance of single-layer graphene is universal, and equal to e 2 /4 (where 2 = h (the Planck constant)). As the optical frequency decreases, the conductivity decreases. However, at some frequency in the THz range, the conductivity increases again, eventually reaching the DC value, where the magnitude of the DC sheet conductance generally displays a sample-and doping-dependent value between ~e 2 /h and 100 e 2 /h. Thus, the THz range is predicted to be a non-trivial region of the spectrum for electron transport in graphene, and may have interesting technological applications. In this paper, we present the first frequency domain measurements of the absolute value of multilayer graphene (MLG) and single-layer graphene (SLG) sheet conductivity and transparency from DC to 1 THz, and establish a firm foundation for future THz applications of graphene.

Terahertz Conductivity of Twisted Bilayer Graphene

Using terahertz time-domain spectroscopy, the real part of optical conductivity [ 1 ð!Þ] of twisted bilayer graphene was obtained at different temperatures (10-300 K) in the frequency range 0.3-3 THz. On top of a Drude-like response, we see a strong peak in 1 ð!Þ at $2:7 THz. We analyze the overall Drude-like response using a disorder-dependent (unitary scattering) model, then attribute the peak at 2.7 THz to an enhanced density of states at that energy, which is caused by the presence of a van Hove singularity arising from a commensurate twisting of the two graphene layers.