Electronic Properties of Bonds in A I B III C VI 2 Chalcopyrite Semiconductors (original) (raw)

In this paper a new approach utilizing the concept of plasma oscillations theory of solids has been applied to investigate the electronic properties such as homopolar gap (E h), heteropolar or ionic gap (E c), average energy gap (E g), bond ionicity (f i) and electronic susceptibility (χ e) for the chemical bonds (A-C and B-C) in complex structured A I B III C VI 2 ternary chalcopyrite crystals. We have presented the expressions relating the electronic properties for these chalcopyrite crystals with plasmon energy (ћω p). The homopolar gap (E h), heteropolar gap (E c), average energy gap (E g), bond ionicity (f i)and electronic susceptibility (χ e)of the bonds in these semiconductors exhibit a linear relationship when plotted on a log-log scale against the valence electron plasmon energy, which lies on the straight line. The calculated values of E h , E c , E g , f i and χ e have been compared with the available theoretical values reported by several workers so far. A fairly good agreement has been obtained between them.

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