Physical Modeling of Microwave Transistors Using a Full-Band/Full-Wave Simulation Approach (original) (raw)
Related papers
Frequency Analysis of Semiconductor Devices Using Full-Band Cellular Monte Carlo Simulations
Monte Carlo Methods and Applications, 2004
The goal of this work is to use a particle-based simulation tool to perform a comparative study of two techniques used to calculate the small signal response of semiconductor devices. Several GaAs and Si devices have been modeled, simulated in the frequency domain to derive their frequency dependent complex output impedance. Conclusions are drawn regarding the applicability and advantages of both approaches.
Microwave Transistor Modeling for Time Domain Simulation
High frequency models of transistors are of interest because they have applications to computer aided design of high frequency circuits. When these models are derived, a problem encountered is that measured transistor S-parameters do not agree with the hybrid-π model. In this article, a simplified method is described to obtain an optimized classical hybrid-π model that predicts the measured S-parameters of the device across the desired frequency band. The modeling capabilities of the CAD program Touchstone (now is incorporated with ADS) were utilized to create such a transistor model. The optimization goal is to minimize the error function between the measured S-parameters and those of the RF transistor equivalent circuit. This technique has been implemented to obtain a high frequency circuit model for the RF transistor BFY 90 across the band from 100 MHz to 500 MHz. Such a model can be used in time-domain circuit analysis programs to predict the transistor behavior.
IEEE Transactions on Microwave Theory and Techniques, 1999
This paper presents the coupling of two commercially available simulation codes: DESSIS-ISE, a multidimensional semiconductor device and circuit simulator, and EMLAB-ISE, an electromagnetic-field solver based on the finite-difference time-domain (FDTD) method. Full-wave electromagnetics and nonlinear devices are simulated in a coupled self-consistent way using the lumped-element approach. The active region of the device is represented as a lumped element within
FDLTD method for the Physical Simulation of Microwave FET Transistor
2011
This paper describes an new application of weighted Laguerre polynomial functions to produce a unconditionally stable Finite-Difference Laguerre-Time-domain (FDLTD) scheme for simulation of the Drift-Diffusion Model (DDM) of microwave active devices. The unconditionally stability of FDLTD method leads to a significant reduction in the simulation time. For example, when 100 weighted Laguerre polynomial functions is used, FDLTD is 5 times faster than conventional FDTD method while they have the same degree of accuracy.
IEEE Transactions on Microwave Theory and Techniques, 1989
A CAD environment leading from technology to performance evaluation by integrating process, device, and circuit simulation would be a valuable tool for the development of monolithic microwave circuits. The paper focuses on the linkage between a physical device simulator for smalland large-signal characterization, and CAD tools for both linear and nonlinear circuit analysis and design. Efficient techniques are presented for the physical dc and small-signal analysis of MESFETs; then, the problem of physical simulation in a circuit environment is discussed, and it is shown how such a simulation makes it possible to obtain small-signal models accounting for propagation and external parasitics. Finally, efficient solutions are proposed for physical large-signal simulation, based on deriving large-signal equivalent circuits from small-signal analyses under different bias conditions. The small-and large-signal characterizations thereby obtained allow physical simulation to be performed efficiently in a circuit environment. Examples and results are presented throughout the paper.
Electromagnetic wave effects on microwave transistors using a full-wave time-domain model
Microwave Theory and …, 1996
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 44, NO. 6, JUNE 1996 ... Transistors Using a Full-Wave Time-Domain :Model ... Mohammad A. Alsunaidi, S. M. Sohel Imtiaz, Student Member, IEEE, and Samir M. El-Ghazaly, Senior Member, IEEE
Progress In Electromagnetics Research, 2007
In this paper, an accurate modeling procedure for GaAs MESFET as active coupled transmission line is presented. This model can consider the effect of wave propagation along the device electrodes. In this modeling technique the active multiconductor transmission line (AMTL) equations are obtained, which satisfy the TEM wave propagation along the GaAs MESFET electrodes. This modeling procedure is applied to a GaAs MESFETs by solving the AMTL equations using Finite-Difference Time-Domain (FDTD) technique. The scattering parameters are computed from time domain results over a frequency range of 20-220 GHz. This model investigates the effect of wave propagation along the transistor more accurate than the slice model, especially at high frequencies.
Nonlinear Simulation Methods for Active Microwave Circuits: A Review of the Art and Novel Trends
International Journal of Nano Devices, Sensors and Systems (IJ-Nano), 2012
This paper discusses in detail, two techniques for the analysis of non-linear electronic circuit. The first technique is an automated version of the traditional time domain solution method (Transient Analysis). For a given circuit topology the state equations are generated by computer and solved numerically. The second technique involves the use of a hybrid timefrequency domain approach and is known as harmonic balance (Steady State Analysis). The formulation and solution methods adopted for both methods are outlined in detail. Emphasis is placed throughout an application to microwave circuits. In order to illustrate the properties of each method, sample analyses for two main circuits are given. The first circuit is that of a linear amplifier operating at 12 GHz and driven into saturation. The second circuit is that of a nonlinear frequency doubler, doubling from 7-14 GHz. Some advanced applications are discussed in order to further highlight the relative advantages and disadvantages of each technique. Finally it is shown how a non-linear CAD package can be produced which allows circuit optimization in a similar way to that allowed by linear CAD programs. Some remaining problems which need more investigations and possible future work are highlighted.
Global modeling of microwave three terminal active devices using the FDTD method
IEICE Electronics Express, 2005
This paper presents a new approach for the global electromagnetic analysis of the three-Terminal active linear and nonlinear microwave circuits using the Finite-Difference Time Domain (FDTD) Method. Here, we have updated the both electric field components on the three -terminal active device by correlating the voltage and current with its impedance. This approach is applied to the analysis of a linear amplifier which includes a three-terminal active MESFET device. Simulations results are in good agreement with those of the commercial tool.
Semiconductor Science and Technology, 2001
In this paper, an ensemble 2D bipolar Monte Carlo simulator is employed for the study of static characteristics, high-frequency response and noise behaviour in a 0.3 µm gate-length n-MOSFET in common source configuration. Short-channel effects, such as velocity overshoot in the pinch-off region, together with the appearance of hot electrons at the drain end of the channel are observed in the static characteristics. Admittance parameters and the small-signal equivalent circuit have been calculated in order to characterize the dynamic response of the device. The use of a bipolar simulator allows one to study the dynamics of both types of carriers simultaneously. While the static results are dominated by the electron transport, the contribution of holes mainly affects the drain-substrate capacitive coupling. The noise behaviour of the simulated MOSFET is also studied (up to 40 GHz) by means of different parameters, such as the spectral densities of the current fluctuations at the drain and gate terminals (and their cross-correlation), normalized α, β and C parameters and NF min. In the saturation regime, due to the presence of hot carriers, an increase in drain and gate noise with respect to the long-channel prediction has been found. Moreover, a stronger correlation between drain and gate noise is observed, especially at low drain current. Induced gate noise is found to play a crucial role in the determination of NF min at high drain currents.