Synthesis of Antimony Sulphoiodide by CVD and its Characterization (original) (raw)
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Optimization of Antimony Sulphoiodide Synthesis Parameters and Study of Its Electrical Properties
Shiny SbSI crystals have been synthesiszed by the Chemical Vapor Deposition (CVD) technique using powder of Antimony, Sulphur and Iodine as the starting material. The impact of parametres used in the method are optimised by the Taguchi optimization technique. The product is derived in the form of needle shaped thin crystals of SbSI on the walls of the quartz tube. Characterizations of the material was acomplished using techniques such as powder X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX) and Raman scattering (0–500 cm −1). The material is semiconducting in nature with low condutivity and high dielectric constant. The electrical activation energy (1.87 eV) is observed which matches with the optical band gap.
A study of the electrical properties of SbSI synthesized using CVD techniques
Rod-shaped antimony sulphoiodide (SbSI) crystals were grown by utilizing elemental components of the compound. The material was characterized by X-ray diffraction (XRD), Raman and surface morphology by SEM. Electrical conductivity was measured on the pallets of powdered SbSI by the four-probe technique in the temperature range of 4–300K, and by the two-probe technique in the temperature range of 300 –550K. SbSI shows semiconducting behavior in the temperature range of 300 –550K and metallic below 300K. Activation energy of an electrical conduction between 300–550K, is 1.87 eV.
A new heterostructures fabrication technique and properties of produced SbSI/Sb2S3 heterostructures
Optics and Lasers in Engineering, 2014
A new technique for heterostructure fabrication in semiconducting compounds has been proposed. Heterojunctions have been made by applying CO 2 laser beam. In contradistinction to currently applied methods (MBE-Molecular Beam Epitaxy and CVD-Chemical Vapor Deposition) the presented technique is simple, of low-cost and very efficient. The new technique has been tested on antimony sulfoiodide (SbSI) single crystals, i.e., a semiconducting, ferroelectric material characterized by many valuable properties. The most important structural, optical and electrical properties of the obtained heterostructures have been presented. Studies have shown that in the CO 2 laser treated samples the junction exists between SbSI single crystal and amorphous phase of antimony sulfide (Sb 2 S 3). At room temperature difference between energy gaps of both parts of SbSI/Sb 2 S 3 heterostructure is equal to 0.3 eV. This leads to many interesting phenomena and potential applications.
Hydrothermal Synthesis of Sb2S3Nanorods Using Iodine via Redox Mechanism
Journal of Nanomaterials, 2011
Crystalline antimony sulfide (Sb2S3) with nanorods morphology was successfully prepared via hydrothermal method by the reaction of elemental sulfur, antimony, and iodine as starting materials with high yield at 180∘C for 24 h. Using oxidation reagent like iodine as an initiator of redox reaction to prepare Sb2S3is reported for first time. The powder X-ray diffraction pattern shows the Sb2S3crystals belong to the orthorhombic phase with calculated lattice parameters,a=1.120 nm,b=1.128 nm, andc=0.383 nm. The quantification of energy-dispersive X-ray spectrometry analysis peaks gives an atomic ratio of 2 : 3 for Sb : S. TEM and SEM studies reveal the appearance of the as-prepared Sb2S3is rodlike which is composed of nanorods with the typical width of 50–140 nm and length of up to 4 μm. The PL emission indicates that band gap of Sb2S3is around 2.50 ev, indicating a considerable blue shift relative to the bulk. A formation mechanism of Sb2S3nanostructure is proposed.
Superficies y …, 1999
Results of the deposition of thin films of sulfide and selenide of antimony from chemical baths containing SbCl 3 and source of sulfide or selenide ions in presence of ligands forming soluble complexes with antimony will be presented. As prepared, the films are of poor crystallinity and show larger band gaps (eg., 2.2 eV in the case of Sb 2 S 3 ) than those reported for the material in bulk, due to quantum confinement arising from the very small crystallites. However, the films after annealing in nitrogen around 350 ºC show well defined peaks in their x rays diffraction patterns. The paper will also deal with the formation of new thin film materials through annealing multilayer thin films involving the antimony chalcogenide films. This possibility opens up the fabrication of thin film semiconductors covering a wide range of structural, electrical and optical properties for large area photonic applications.
Journal of Solid State Chemistry, 2008
We described herein a facile solution-phase route to three nanocrystals of antimony oxychlorides and oxides (Sb 4 O 5 Cl 2 , Sb 8 O 11 Cl 2 , and Sb 2 O 3), whose morphologies and phases were varied with the pH value of a reaction mixture or composition of a mixed solvent. In particular, the solvent composition controlled the selective preparation of cubic Sb 2 O 3 (senarmontite) and orthorhombic Sb 2 O 3 (valentinite). Both cubic and orthorhombic Sb 2 O 3 samples exhibited strong emission properties.
Effects of rapid thermal processing on chemically deposited antimony sulfide thin films
Materials Science in Semiconductor Processing, 2018
In this paper, we report studies on rapid thermal processed (RTP) antimony sulfide (Sb 2 S 3) thin films grown on glass and Mo-coated glass substrates by chemical bath deposition. Structure, morphology, elemental composition, optical and electrical properties of the thin films processed at different temperatures (325-700°C) for 1-5 min were evaluated. X-ray diffractometry and Raman spectral studies showed the crystalline nature of the thin films. XPS analysis demonstrated the elemental composition and chemical states. Optical band gap of the films was evaluated from the optical absorption spectra, and the bandgap values were in the range of 1.7-2.1 eV. All the RTP samples showed photocurrent response. Crystallinity and morphology of the films were modified by varying RTP temperature and time.
Alkaline bath chemical deposition of antimony (III) sulphide thin films
Antimony (III) sulphide thin films have been deposited onto a glass substrate from an aqueous alkaline thioacetamide bath using tartaric acid as a complexing agent. The bath composition and its pH are optimised. Structural, optical and electrical properties have been investigated. X-ray diffraction studies show that the films are amorphous and the precipitated powder is polycrystalline. Optical absorption studies estimated the band gap to be 1.62 eV. The electrical resistivity at room temperature (300 K) is of the order of l07 ~cm. Compositional analyses by inductively coupled plasma atomic emission spectroscopy revealed that the films are almost stoichiometric in composition.