AC Small-Signal Model for Magnetoresistive Lateral Spin Valves (original) (raw)
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Enhanced magnetoresistance in lateral spin-valves
Applied Physics Letters, 2010
The effect of feature sizes on the characteristics of lateral spintronic devices have been investigated experimentally and theoretically. It is demonstrated that confining spin-transport in the active region of a device enhances magnitude of the spin-dependent response substantially. Numerical simulation of spin-transport corroborates the experimental observations. Device characteristics are found to be a strong function of spin-polarizer and analyzer dimensions. The response is observed to attain a peak value for an optimum device feature size, and this is seen to be a function of temperature. Spin dependent effects become weaker for very small and very large devices.
Superlattices and Microstructures, 2019
Keywords: Spin transfer torque Spin seebeck effect Heterostructure Spin FET A B S T R A C T Over the last decade, the construction and analysis of spintronic devices have been explored. This mini-review focuses on the basic spintronic phenomena such as giant magnetoresistance, tunnel magnetoresistance, spin transfer torque, spin Hall effect, spin Seebeck effect and BGKC (Bruno-Gnanasekar-Karunakaran-Chandramohan) observation. The mechanism of spin-orbit interaction is theoretically discussed. The in-plane wave vector, magnetic field, bias voltage and the delta potential are influenced on spin-polarized transport in heterostructures. The comparison between the role of Dresselhaus and Rashba spin-orbit interaction in the heterostructure is investigated. The principle of spintronic devices (sensors, magnetic random access memory, unipolar spin diode, spin photodiode, spin LED, spin solar cell, spin FET) and spintronic instruments (spin SEM, spin STM) are also explained.
Materials Research Express, 2020
One of the most prominent and effective applications of graphene in the field of spintronics is its use as a spacer layer between ferromagnetic metals in vertical spin valve devices, which are widely used as magnetic sensors. The magnetoresistance in such devices can be enhanced by a selection of suitable spacer materials and proper fabrication procedures. Here, we report the use of dry-transferred single- and double-layer graphene, grown by chemical vapor deposition (CVD), as the spacer layer and the fabrication procedure in which no photo-resist or electron-beam resists is used. The measured maximum magnetoresistance of NiFe/CVD-Graphene/Co junction is 0.9% for the single- and 1.2% for the double-layer graphene at 30 K. The spin polarization efficiency of the ferromagnetic electrodes is about 6.7% and 8% for the single- and the double-layer graphene, respectively, at the same temperature. The bias-independent magnetoresistance rules out any contamination and oxidation of the inter...