Electronic excitation induced modifications in the ferroelectric polarization of BiFeO3 thin films (original) (raw)
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Journal of Applied Physics, 2007
BiFeO 3 (BFO) thin films were fabricated on Pt(111)∕Ti∕SiO2∕Si substrates by using a polymeric precursor solution under appropriate crystallization conditions. The capacitance dependence on voltage is strongly nonlinear, confirming the ferroelectric properties of the films resulting from the domain switching. The leakage current density increases with annealing temperature. The polarization electric field curves could be obtained in BFO films annealed at 500 °C, free of secondary phases. X-ray photoelectron spectroscopy spectra of films annealed at 500 °C indicated that the oxidation state of Fe was purely 3+, demonstrating that our films possess stable chemical configurations.
Electronic structure correlation with ferroelectric behavior of Ca-doped BiFeO3 films
Journal of Electron Spectroscopy and Related Phenomena, 2020
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Journal of Experimental Nanoscience, 2014
BiFeO 3 (BFO) multifunctional oxide exhibits fascinating multiferroic properties suitable for potential application in nanoscale electronic devices such as nonvolatile random accesses memory (FeRAM), field effect transistors, capacitors, logic circuits, etc. In this communication, we report the results of studies on 200 MeV Ag C15 ion irradiation-induced modifications in the structural, microstructural, electrical (IÀV, CÀV and PÀE) and magnetic properties of pulsed laser deposited nanostructured BFO films grown on conducting SrTi 0.998 O 0.002 TiO 3 (SNTO) substrates. Role of nanoscale structural defects and oxygen vacancies in modifying the physical properties of BFO/SNTO has been discussed in this work.
Integrated Ferroelectrics, 2010
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Role of oxygen in multiferroic behavior of BiFeO3 films grown on 0.2% Nb doped SrTiO3
Solid State Communications, 2013
Effect of oxygen partial pressure on the structural, transport and magnetic properties of BiFeO 3 (BFO) films grown on n-type conducting SrNb 0.002 Ti 0.998 O 3 (SNTO) substrates has been investigated. Variation in oxygen partial pressure, during pulsed laser deposition (PLD), results in the modifications in the physical properties of the films. Rutherford Backscattering (RBS) measurement shows that, BFO/SNTO films grown at 100 and 300 mT oxygen partial pressures, exhibit better polarization and magnetization. Tuning of electrical and magnetic properties with oxygen partial pressure has been discussed in the light of oxygen vacancies. Various charge transport mechanisms have been discussed to understand the leakage current mechanisms in BFO/SNTO films.
Ferroelectric properties of multiphase Bi–Fe–O thin films
Solid State Ionics, 2007
We report on the ferroelectric properties of multiphase BiFeO 3 thin films grown under varying oxygen deposition pressures. The dominant phases formed in the film change continuously from a mixture of BiFeO 3 and Bi 2 O 3 to a mixture of BiFeO 3 and Fe 2 O 3 as the pressure is varied. Xray diffraction and transmission electron microscopy revealed that an epitaxial nanocomposite of BiFeO 3 and Fe 2 O 3 grew at deposition pressures of approximately 20 mTorr. The BiFeO 3 grains in the BiFeO 3-Fe 2 O 3 nanocomposites were completely relaxed and unstrained. At room temperature the BiFeO 3-Fe 2 O 3 nanocomposite film was characterized by a high switchable polarization (60 μC/cm 2) and a low leakage current density (≈ 1 × 10 − 4 A/cm 2 at 250 kV/cm).
Journal of Physics D: Applied Physics, 2008
Multiferroic BiFeO 3 films have been grown on LaNiO 3−x /SrTiO 3 and Pt/Si substrates by RF magnetron sputtering. The films showed fully saturated ferroelectric hysteresis loops with large remanent polarization of 64 µC cm −2 , suitable for most device applications. Piezoresponse force microscopy confirmed that the films were electrically writable. In addition to the high-frequency intrinsic dielectric loss of epitaxial films, the Argand diagram also revealed low-frequency contributions from both dc conductivity and interfacial polarization at electrodes. For polycrystalline films on Pt/Si, the dominant contribution to dielectric loss was space charge polarization at grain boundaries.
Ferroelectric properties of Mn-doped BiFeO 3 thin films
Current Applied Physics, 2011
Bi(Fe0.99Mn0.01)O3 thin films were prepared on a Pt(111)/Ti/SiO2/Si(100) substrates by pulsed laser deposition at various deposition temperature, such as at 520 °C, 530 °C, and 540 °C, respectively. The film deposited at 540 °C exhibited better ferroelectric property such as large remnant polarization (2Pr = 139 μC/cm2) and low coercive field (2Ec = 630 kV/cm). However, high leakage current density was observed especially in a high electric field range. The improvements were attributed to the facts of highly (111)-preferred orientation and uniform large grain size when the film was deposited at 540 °C.
Synthesis and ferroelectric properties of epitaxial BiFeO3 thin films grown by sputtering
Applied Physics Letters, 2006
We have grown epitaxial BiFeO 3 thin films with smooth surfaces on ͑001͒, ͑101͒, and ͑111͒ SrTiO 3 substrates using sputtering. Four-circle x-ray diffraction and cross-sectional transmission electron microscopy show that the BiFeO 3 thin films have rhombohedral symmetry although small monoclinic distortions have not been ruled out. Stripe ferroelectric domains oriented perpendicular to the substrate miscut direction and free of impurity phase are observed in BiFeO 3 on high miscut ͑4°͒ ͑001͒ SrTiO 3 , which attributes to a relatively high value of remanent polarization ͑ϳ71 C/cm 2 ͒. Films grown on low miscut ͑0.8°͒ SrTiO 3 have a small amount of impure phase ␣-Fe 2 O 3 which contributes to lower the polarization values ͑ϳ63 C/cm 2 ͒. The BiFeO 3 films grown on ͑101͒ and ͑111͒ SrTiO 3 exhibited remanent polarizations of 86 and 98 C/cm 2 , respectively.