EFFICIENCY ENHANCEMENT OF WIDE BANDGAP SOLAR CELL BY PROPERLY TUNED INDIUM GALLIUM NITRIDE QUANTUM DOTS (original) (raw)
The recent surge in the utilization of semiconductor nanostructures for solar energy conversion has led to the development of high-efficiency solar cells. Some of these recent advances are in the areas of synthesis of new semiconductor materials and the ability to tune the electronic properties through size, shape, and composition and to assemble quantum dots as hybrid assemblies. The emergence of quantum dot-sensitized solar cells has provided an alternative way to harvest sunlight for energy conversion. In this paper, InGaN-based quantum dot intermediate band solar cell model has been proposed. Insertion of quantum dots leads to the formation of an intermediate band between the conduction and valence band which contribute relatively higher short circuit current and open circuit voltage because of wide bandgap GaN host material. Performance of the solar cell has been investigated under a wide variety of intensities, wavelengths and series resistances. Our mathematical simulation showed that the cell has a short circuit current of 44.6 mA, open circuit voltage of 1.3304 V and 84.06% Fill Factor under 116 mW/cm 2 light intensity. Consequently, relatively higher power conversion efficiency of about 43% has been achieved which is much higher than the literature value reported elsewhere. MATLAB version 7.10.0499 (R2010) software has been used for the necessary calculation and simulation involved in this procedure.
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