A 2.4 GHz packaged power amplifier using GaAs PHEMT technology (original) (raw)
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A 3.5 GHz packaged medium power amplifier using GaAs PHEMT
2011
This paper describes the design and measured performance of monolithic microwave integrated circuit (MMIC) medium power amplifier for WiMAX applications in the 3.5 GHz band. The medium power amplifier (MPA) was designed using 0.15μm GaAs power PHEMT technology. The die size of this MPA is 1.2mm × 0.7mm and this MPA also offered in 16-pin QF1 packaged. With only a 3.0 V of drain voltage (VDS), a packaged MPA exhibits the output power at 1dB gain compression (P1dB) of 17.24 dBm, power-added efficiency (PAE) of 24.12% and gain of 5.74 dB, respectively. The maximum current, Imax of this amplifier is 80mA and the power consumption for the device is 240mW.
2.4 GHz medium power amplifier for wireless LAN applications using GaAs PHEMT
2010
A 2.4GHz medium power amplifier (MPA) using 0.15μm GaAs PHEMT technology for wireless local area network (LAN) applications is demonstrated. At 3.0 V of drain voltage (VDS), a fabricated MPA exhibits the output power at 1dB gain compression (P1dB) of 15.20 dBm, power-added efficiency (PAE) of 12.70% and gain of 9.70 dB, respectively. The maximum current, Imax of this amplifier is 84.40mA and the power consumption for the device is 253.20mW.
2.4 GHz GaAs PHEMT medium power amplifier for wireless LAN applications
2010
This paper describes the design and measurement of a medium power amplifier (MPA) using 0.15 μm GaAs PHEMT technology for wireless application. At 2.4 GHz and 3.0 V of VDS, a fabricated MPA exhibits a P1dB of 15.20 dBm, PAE of 12.70% and gain of 9.70 dB. The maximum current, Imax is 84.40 mA and the power consumption for this device is 253.20 mW. The die size of this amplifier is 1.2 mm × 0.7 mm.
33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C)
A single supply, high linearity, high efficient power devices and amplifier MMIC is implemented utilizing high performance of quasi-enhanced power PHEMT technology. The PHEMT power device features Vth=-0.65 V, Vbdg=26 V, Imax=144 mA/mm at Vgs=0.2 V, Gm=340 mS/mm. When matched on-wafer compromise between power and efficiency, the OIP3 at peak IP3 is 40.5 dBm for 2 GHz and 37.0 dBm for 5.8 GHz, respectively. The power amplifier achieves at 5.8 GHz Pout=27 dBm with associated PAE=45 % at 5 V under Vgs=0 V, G L =14.5 dB, OIP3=37.5 dBm.
A 3.5 GHz medium power amplifier using 0.15 µm GaAs PHEMT for WiMAX applications
2009
This paper presents the design and measurement of a single-ended medium power amplifier (MPA) using 0.15 μm GaAs PHEMT technology for 802.16 WiMAX applications. At a supply voltage of 3.0 V and 3.5 GHz operating frequency, a single-ended MPA achieves input return loss of 14.11 dB, output return loss of 12.38 dB, small-signal gain (S21) of 8.34 dB, P1dB of 16.81 dBm, power gain of 6.81 dB and the PAE of 16.74%. The die size of this amplifier is 1.2 mm à 0.7 mm. The maximum current, Imax is 80.70 mA and the power consumption of the device is 242.10 mW.
X-band Power Amplifier using pHEMT GaAs Technology with Harmonic Tuning
International Journal of Innovative Research in Science, Engineering and Technology, 2018
This paper describes a new method to the design and measured performance of Monolithic Microwave Integrated Circuit (MMIC) power amplifier (PA) for application in communication circuit systems that increase efficiency, output power, gain, small return loss (input & output) and low cost in the circuit. The proposed method is based on a combination of a GaAs power amplifier along with power divider/combiner. The power amplifier (PA) is designed using 0.1µm GaAs power pHEMT technology. The combination and design of the proposed power amplifier ensue gain of over 21dB in the 8 to 12GHz (X-band) frequency bandwidth. With only 3.0 V of drain voltage (VDS) to driver and 4.0V of drain voltage to 2nd stage, the PA exhibits an output power at 1dB gain compression (P1dB) of 23.059dBm, and gain of 22.959 dB, respectively. The maximum current, Imax of this packaged amplifier is 49mA and the power consumption for the device is 650mW. This method have desirable amplitude for the output signal in the fundamental and 2nd harmonics.
Design of 2.4 Ghz Mmic Feed Forward Amplifier for Wireless Applications
International Journal of Microwave Engineering (JMICRO), 2019
This paper proposes a design of 0.15μm Monolithic Microwave Integrated Circuit (MMIC) power amplifier using GaAs pHEMT technology at 2.4 GHz which employs feed forward linearization technique to improve linearity. The amplifier is designed to operate in personal communication systems (PCS) frequency range using WIN semiconductor GaAs pHEMT technology. Single stage power amplifier is designed in lumped and distributed components with its layout. Linearity of PA is improved by Feed forward Linearization technique. To evaluate the performance of proposed linearized amplifier, Advanced Design system (ADS) tool is used. The designed circuit results with 13.65dBm output power at 1dB compression point (P1dB), 6dB power gain and maximum Power added efficiency of 16.4%. Linearity achieved by feed forward linearizer circuit with third order intermodulation suppression of 30dBc for the output power level of 8.217dBm and 1dB compression point at an input power of 15 dBm whereas 6 dBm for the Power amplifier without feed forward linearizer circuit. The designed Power amplifier system with feed forward linearizer had IMD3 suppression of 30dBc which is in appreciable range with improvement in 1dB compression point.
A High Efficiency 1.8W Power Amplifier for Wireless Communications
Elektronika ir Elektrotechnika, 2014
A power amplifier, implemented in 2µm InGaP/GaAs Heterojunction Bipolar Transistor (HBT) is presented. The size of the fabricated chip is 700 µm × 700 µm. With an integrated input matching network, the PA observes an input return loss (S11) of-22 dB. Biased at low quiescent current of 65 mA, it delivers a maximum output power of 1.8 W with 71 % efficiency at 1.85 GHz. The output return loss (S22) of the PA is-15.2 dB. The output matching network is designed to reduce the mismatch loss between the power amplifier and the antenna without compromising the output power and efficiency. The PA also exhibits a K-factor greater than 1 from DC up to 5 GHz, ensuring unconditional stability. The power gain of the PA is 14.9 dB. The measured results verify that the PA is capable to operate at high efficiency and to deliver high output power with a good output return loss.
DESIGN OF 2.4 GHz CMOS POWER AMPLIFIER FOR WIRELESS COMMUNICATION
This paper gives the information about designing the 2.4GHz CMOS power amplifier for wireless communication using 130nm technology. Previously work present different approaches for designing the CMOS power amplifier for different class with different technology. This paper proposed class-B power amplifier using 130 nm technology for gain more than 15dB.The class-B power amplifier is design and to meet the frequency response for 2.4 GHz with gain of 67.321dB, the proposed power supply work with the voltage from 1.3 to 3V, which means that we can used these design for battery aided hand held electronic moving or electronic mobile communication equipment .The proposed power amplifier is designed using ADS tool.