In-situ scanning electron microscopy and atomic force microscopy Young's modulus determination of indium oxide microrods for micromechanical resonator applications (original) (raw)
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High quality factor indium oxide mechanical microresonators
Applied Physics Letters, 2015
The mechanical resonance behavior of as-grown In 2 O 3 microrods has been studied in this work by in-situ scanning electron microscopy (SEM) electrically induced mechanical oscillations. Indium oxide microrods grown by a vapor-solid method are naturally clamped to an aluminum oxide ceramic substrate, showing a high quality factor due to reduced energy losses during mechanical vibrations. Quality factors of more than 10 5 and minimum detectable forces of the order of 10 À16 N/Hz 1/2 demonstrate their potential as mechanical microresonators for real applications. Measurements at low-vacuum using the SEM environmental operation mode were performed to study the effect of extrinsic damping on the resonators behavior. The damping coefficient has been determined as a function of pressure. V
Nanomechanical Characterization of Indium Nano/Microwires
Nanoscale Research Letters, 2010
Nanomechanical properties of indium nanowires like structures fabricated on quartz substrate by trench template technique, measured using nanoindentation. The hardness and elastic modulus of wires were measured and compared with the values of indium thin film. Displacement burst observed while indenting the nanowire. 'Wire-only hardness' obtained using Korsunsky model from composite hardness. Nanowires have exhibited almost same modulus as indium thin film but considerable changes were observed in hardness value.
Microelectronic Engineering, 2014
In this article we demonstrate application of atomic force microscopy (AFM) related techniques in characterization of mechanical properties of micromechanical resonators. The investigated structures are a group of doubly clamped beams of 100 nm thick silicon nitride fabricated by low pressure chemical vapor deposition (LPCVD) and lithography with reflective aluminum coating of 10 nm thickness. Width and length of the fabricated and tested structures vary in the range from 3 up to 10 lm and from 20 to 80 lm respectively. In order to determine the structure stiffness force deflection curves were recorded using contact mode (CM) atomic force microscope at the defined resonator position. Moreover the contact resonance (CR) AFM was applied in order to determine the resonance frequencies of the tested microfabricated resonators. Additionally, in order to estimate the stress in the resonator bilayer structure tapping mode (TM) AFM topography investigations were conducted and the recorded topography images analyzed.
Microsystem Technologies, 2009
In this work, the design, fabrication and characterization of an electromagnetic inertial microgenerator compatible with Si micro-systems technology is presented. The device includes a fixed micromachined coil and a movable magnet mounted on a resonant polymeric structure. The characterization of the fabricated prototypes has allowed to observe the presence of non linear effects that lead to the appearance of hysteretic vibrational phenomenon. These effects are likely related to the mechanical characteristics of the polymeric membrane, and determine an additional dependence of vibration frequency on the excitation amplitude. Under such non linear conditions, power densities up to 40 µW/cm 3 are obtained for devices working with low level excitation conditions similar to those present in domestic and office environment. I.
Computing Research Repository, 2008
Abstract- In this work, the design, fabrication and characterization of an electromagnetic inertial microgenerator compatible with Si micro-systems technology is presented. The device includes a fixed ,micromachined ,coil and ,a movable magnet,mounted ,on a ,resonant polymeric structure. The characterization of ,the fabricated prototypes has allowed to observe the presence of non ,linear effects that lead to the appearance of hysteretic
Stress control of tensile-strained In1−xGaxP nanomechanical string resonators
Applied Physics Letters, 2018
We investigate the mechanical properties of freely suspended nanostrings fabricated from tensile-stressed, crystalline In 1−x Ga x P. The intrinsic strain arises during epitaxial growth as a consequence of the lattice mismatch between the thin film and the substrate, and is confirmed by x-ray diffraction measurements. The flexural eigenfrequencies of the nanomechanical string resonators reveal an orientation dependent stress with a maximum value of 650 MPa. The angular dependence is explained by a combination of anisotropic Young's modulus and a change of elastic properties caused by defects. As a function of the crystal orientation a stress variation of up to 50 % is observed. This enables fine tuning of the tensile stress for any given Ga content x, which implies interesting prospects for the study of high Q nanomechanical systems.
Damping mechanisms in high-Q micro and nanomechanical string resonators
2011
Resonant micro and nanostrings were found to have extraordinarily high quality factors (Qs). Since the discovery of the high Qs of silicon nitride nanostrings, the understanding of the underlying mechanisms allowing such high quality factors has been a topic of several investigations. So far it has been concluded that Q is enhanced due to the high energy stored in the string tension. In this paper, damping mechanisms in string resonators are systematically investigated by varying the geometry and the tensile stress of silicon nitride microstrings. The measured quality factors are compared to an analytical model for Q based on bending-related damping mechanisms. It is shown that internal material damping is limiting the quality factor of narrow strings with a width of 3 μm. Q is strongly width dependent and clamping losses evidently seem to be the limiting damping mechanism for wider strings. It is further shown that Q is influenced by interference effects in the substrate and thus by the clamping of the macroscopic chip. A maximum quality factor of up to 7 million is presented for high-stress silicon nitride strings with a resonance frequency of 176 kHz.