A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors (original) (raw)

2005, IEEE Nuclear Science Symposium Conference Record

Czochralski silicon detectors irradiated with and 10MeV protons

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2006

We have irradiated Czochralski silicon (Cz-Si) and Float Zone silicon (Fz-Si) detectors with 24GeV/c and 10MeV protons. Samples were characterized with Capacitance-Voltage measurements (CV), Transient Current Technique (TCT) and secondary electron backscattering recorded by Scanning Electron Microscope (SEM). We present the evolution of the effective doping concentration as a function of irradiation fluence as well as the introduction rate of

Loading...

Loading Preview

Sorry, preview is currently unavailable. You can download the paper by clicking the button above.