A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors (original) (raw)
2005, IEEE Nuclear Science Symposium Conference Record
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Czochralski silicon detectors irradiated with and 10MeV protons
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We have irradiated Czochralski silicon (Cz-Si) and Float Zone silicon (Fz-Si) detectors with 24GeV/c and 10MeV protons. Samples were characterized with Capacitance-Voltage measurements (CV), Transient Current Technique (TCT) and secondary electron backscattering recorded by Scanning Electron Microscope (SEM). We present the evolution of the effective doping concentration as a function of irradiation fluence as well as the introduction rate of
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