Terahertz radiation from large aperture Si p-i-n diodes (original) (raw)

Subpicosecond electromagnetic pulses with terahertz (THz) bandwidths have been produced using large aperture silicon (Si) p-i-n diodes under various reverse bias conditions. The findings indicate that increasing reverse bias improves the amplitude and spectral bandwidth of the emitted pulses. The ability of these diodes to emit THz radiation, coupled with their optimized intrinsic layer thickness for high-quantum efficiency, marks a significant advancement in photoconducting structures for studying transient behavior in photonic applications.