Difiusive Transport in Quasi-2D and Quasi-1D Electron Systems (original) (raw)

2009

Abstract

Quantum-conflned semiconductor structures are the cornerstone of modern-day electronics. Spa- tial conflnement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among difierent states due to e-cient scattering with phonons, charged impurities, surface roughness and other electrons, so transport is scattering-limited (dif- fusive) and well described by the Boltzmann transport equation. In this review,

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