Change of the surface induced optical anisotropy of the clean Si(110) surface by oxidation (original) (raw)

Optical Anisotropy of Oxidized Si(001) Surfaces and Its Oscillation in the Layer-By-Layer Oxidation Process

Masakazu Ichikawa

Physical Review Letters, 2001

View PDFchevron_right

Oxidation- and organic-molecule-induced changes of the Si surface optical anisotropy: ab initio predictions

Friedhelm Bechstedt

Journal of Physics: Condensed Matter, 2004

View PDFchevron_right

Optical spectra and microscopic structure of the oxidized Si(100) surface: Combined in situ optical experiments and first principles calculations

yves borensztein

Physical Review B, 2009

View PDFchevron_right

Ab initio study of reflectance anisotropy spectra of a submonolayer oxidized Si (100) surface

G. Onida

2005

View PDFchevron_right

Si(001) surface optical anisotropies induced by π-conjugated overlayers and oxidation

Friedhelm Bechstedt

Current Applied Physics, 2006

View PDFchevron_right

Si(001) surface optical anisotropies induced by pi-conjugated overlayers and oxidation

Friedhelm Bechstedt

Curr Appl Phys, 2006

View PDFchevron_right

All-optical determination of initial oxidation of Si(100) and its kinetics

Friedhelm Bechstedt

The European Physical Journal B, 2008

View PDFchevron_right

Si(0 0 1) surface optical anisotropies induced by p-conjugated overlayers and oxidation

Friedhelm Bechstedt

Curr Appl Phys, 2006

View PDFchevron_right

Real-time observation of the dry oxidation of the Si (100) surface with ambient …

Zahid Hussain

Applied Physics …, 2008

View PDFchevron_right

Layer-By-Layer Oxidation of Silicon Surfaces

Masakazu Ichikawa

MRS Proceedings, 1999

View PDFchevron_right

The initial stages of the oxidation of Si(100)2 x 1 studied by STM

Isao Sumita

Ultramicroscopy, 1992

View PDFchevron_right

Nanowire-induced optical anisotropy of the Si(111)-In surface

Wenchang Lu

Physical Review B, 2003

View PDFchevron_right

STM studies of Si(100)-2×1 oxidation: defect chemistry and Si ejection

Phaedon Avouris

Ultramicroscopy, 1992

View PDFchevron_right

Early Stages of Oxidation of Clean Si(111)-7x7 and Si(100)-2x1 Surfaces Studied by In-Situ High Resolution X-Ray Photoelectron Spectroscopy

Josep Alay

Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials, 1996

View PDFchevron_right

Very fast light-induced degradation of a-Si:H/c-Si(100) interfaces

christophe ballif

Physical Review B, 2011

View PDFchevron_right

Terrace and step contributions to the optical anisotropy of Si(001) surfaces

Friedhelm Bechstedt

Physical Review B, 2001

View PDFchevron_right

Surface-induced optical anisotropy of Si and Ge

Lucymarie Mantese

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000

View PDFchevron_right

Full microscopic treatment of the optical response of the Si(100) 2 × 1 surface

Gert Poppe

Thin Solid Films, 1993

View PDFchevron_right

Early oxidation stages of the strained Ge/Si (105) surface: A reflectance anisotropy spectroscopy study

L. Persichetti, Conor Hogan, Maurizia Palummo, A. Balzarotti, C. Goletti

View PDFchevron_right

Atomistic mechanism of the initial oxidation of the clean Si(100)-2 x1 surface by O2 and SiO2 decomposition

Charles Musgrave

View PDFchevron_right

Reflectance-anisotropy spectroscopy and surface differential reflectance spectra at the Si (100) surface: combined experimental and theoretical study

yves borensztein

2009

View PDFchevron_right

Temperature dependent structural, electronic and optical properties of the Si(100) surface from first principles

robert minnings

2019

View PDFchevron_right

Three-pairs of doublet bands assigned toSiH2scissoring modes observed inH2O-induced oxidation of Si(100) surfaces

Shinkoh Nanbu

Physical Review B, 2004

View PDFchevron_right

On the interaction of oxygen with a Cs-monolayer-covered Si(100) surface

Sergei Davydov

Applied Surface Science, 1999

View PDFchevron_right

Interface properties of the Si(100)–SiO2 system formed by rapid thermal oxidation

Alan Mathewson

Microelectronics Reliability, 2000

View PDFchevron_right

Initial and secondary oxidation products on the Si(111)-(7 × 7) surface identified by atomic force microscopy and first principles calculations

Ayhan Yurtsever

Applied Physics Letters, 2014

View PDFchevron_right

Kinetics of Initial Layer-by-Layer Oxidation of Si(001) Surfaces

Masakazu Ichikawa

Physical Review Letters, 1998

View PDFchevron_right

Real-time observation of the dry oxidation of the Si(100) surface with ambient pressure x-ray photoelectron spectroscopy

Muhammad Z A H I D Hussain

Applied Physics Letters, 2008

View PDFchevron_right

Electronic structure of Si(100) surfaces studied by two-photon photoemission

Martin Weinelt

Physical Review B, 2001

View PDFchevron_right

Accounting for anomalous oxidation states of silicon at the Si/SiO2 interface

L. Renna

Surface and Interface Analysis, 2002

View PDFchevron_right

Initial oxidation stages of hydrogen- and styrene-terminated Si(100) surfaces: A molecular dynamics study

Bhavin Jariwala

Surface Science, 2011

View PDFchevron_right

Indirect in situ characterization of Si(100) substrates at the initial stage of III–V heteroepitaxy

Thomas Hannappel

Journal of Crystal Growth, 2011

View PDFchevron_right

Photooxidation of Hydrogen-Terminated Si(111) Surfaces Studied by Optical Second Harmonic Generation

Scott Mitchell

The Journal of Physical Chemistry B, 2003

View PDFchevron_right

Atomic-level study of the robustness of the Si(100)-2×1:H surface following exposure to ambient conditions

Joseph Lyding

Applied Physics Letters, 2001

View PDFchevron_right