Influence of defects on the optical and structural properties of Ge dots embedded in an Si/Ge superlattice (original) (raw)

Journal of Luminescence, 2006

Abstract

In this work we studied the influence of high-energy proton irradiation on the optical and structural properties of an Si/Ge superlattice (SL) with embedded Ge quantum dots (QDs). The presence of QDs in the as-grown samples was established by transmission electron microscopy and photoluminescence (PL). The samples were irradiated with 2.0MeV protons to fluences in the range 2×1012–2×1014cm–2. The structural

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