IJERT-High Performance InGaN Solar Cell from Numerical Analysis (original) (raw)
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Optimization of InGaN Solar cell
Sains Malaysiana, 2022
In this study, the indium gallium nitride (In x Ga 1-x N) p-n junction solar cells were optimized to achieve the highest conversion efficiency. The In x Ga 1-x N p-n junction solar cells with the whole indium mole fraction (0 ≤ x ≤ 1) were simulated using SCAPS-1D software. Optimization of the p-and n-In x Ga 1-x N layer's thickness and carrier density were also carried out. The thickness and carrier density of each layer was varied from 0.01 to 1.50 μm and 10 15 to 10 20 cm-3. The simulation results showed that the highest conversion efficiency of 23.11% was achieved with x = 0.6. The thickness (carrier density) of the p-and n-layers for this In 0.6 Ga 0.4 N p-n junction solar cell are 0.01 (10 20) and 1.50 μm (10 19 cm-3), respectively. Simulation results also showed that the conversion efficiency is more sensitive to the variations of layer's thickness and carrier density of the top pIn x Ga 1-x N layer than the bottom n-In x Ga 1-x N layer. Besides that, the results also demonstrated that thinner pIn x Ga 1-x N layer with higher carrier density offers better conversion efficiency.
Micromachines
A solar cell structure with a graded bandgap absorber layer based on InGaN has been proposed to overcome early predicted efficiency. Technological issues such as carrier concentration in the p- and n-type are based on the data available in the literature. The influence of carrier concentration-dependent mobility on the absorber layer has been studied, obtaining considerable improvements in efficiency and photocurrent density. Efficiency over the tandem solar cell theoretical limit has been reached. A current density of 52.95 mA/cm2, with an efficiency of over 85%, is determined for a PiN structure with an InGaN step-graded bandgap absorption layer and 65.44% of power conversion efficiency for the same structure considering piezoelectric polarization of fully-strained layers and interfaces with electron and hole surface recombination velocities of 10−3 cm/s.
Electrochem, 2022
The impact of doping concentration and thickness of n-InGaN and p-InGaN regions on the power conversion efficiency of single junction-based InGaN solar cells was studied by the Silvaco ATLAS simulation software. The doping concentration 5 × 1019 cm−3 and 1 × 1015 cm−3 were optimized for n-InGaN and p-InGaN regions, respectively. The thickness of 300 nm was optimized for both n-InGaN and p-InGaN regions. The highest efficiency of 22.17% with Jsc = 37.68 mA/cm2, Voc = 0.729 V, and FF = 80.61% was achieved at optimized values of doping concentration and thickness of n-InGaN and p-InGaN regions of InGaN solar cells. The simulation study shows the relevance of the Silvaco ATLAS simulation tool, as well as the optimization of doping concentration and thickness of n- and p-InGaN regions for solar cells, which would make the development of high-performance InGaN solar cells low-cost and efficient
Journal of Applied Physics, 2010
In this study, we conducted numerical simulations with the consideration of microelectronic and photonic structures to determine the feasibility of and to design the device structure for the optimized performance of InGaN p-i-n single homojunction solar cells. Operation mechanisms of InGaN p-i-n single homojunction solar cells were explored through the calculation of the characteristic parameters such as the absorption, collection efficiency ͑͒, open circuit voltage ͑V oc ͒, short circuit current density ͑J sc ͒, and fill factor ͑FF͒. Simulation results show that the characteristic parameters of InGaN solar cells strongly depend on the indium content, thickness, and defect density of the i-layer. As the indium content in the cell increases, J sc and absorption increase while , V oc , and FF decrease. The combined effects of the absorption, , V oc , J sc , and FF lead to a higher conversion efficiency in the high-indium-content solar cell. A high-quality In 0.75 Ga 0.25 N solar cell with a 4 m i-layer thickness can exhibit as high a conversion efficiency as ϳ23%. In addition, the similar trend of conversion efficiency to that of J sc shows that J sc is a dominant factor to determine the performance of p-i-n InGaN solar cells. Furthermore, compared with the previous simulation results without the consideration of defect density, the lower calculated conversion efficiency verifies that the sample quality has a great effect on the performance of a solar cell and a high-quality InGaN alloy is necessary for the device fabrication. Simulation results help us to better understand the electro-optical characteristics of InGaN solar cells and can be utilized for efficiency enhancement through optimization of the device structure.
High Performance InGaN-Based Solar Cells
2012
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Modeling of InGaN p-n junction solar cells
Optical Materials Express, 2013
InGaN p-n junction solar cells with various indium composition and thickness of upper p-InGaN and lower n-InGaN junctions are investigated theoretically. The physical properties of InGaN p-n junction solar cells, such as the short circuit current density (J SC ), open circuit voltage (V oc ), fill factor (FF), and conversion efficiency (η), are theoretically calculated and simulated by varying the device structures, position of the depletion region, indium content, and photon penetration depth.
Characterization and analysis of InGaN photovoltaic devices
Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005., 2005
The InGaN material system is investigated to achieve high efficiency solar cells, using tandem and quantum-well structures to implement high efficiency concepts. Here InGaN p-i-n and quantum-well solar cells are designed, grown by MOCVD and fabricated into mesa devices. They are electrically characterized by I-V response under dark, white light and UV illumination and internal quantum efficiency (IQE). Material characterization is done by Xray diffraction, photoluminescence and photoemission. InGaN solar cells with high In compositions are grown in two configurations, one incorporating it into the i-region of a p-i-n solar cells, and the other incorporating as the wellregion of a quantum-well device. A QE of 8% was measured from these quantum-wells. Solar cells with In lean In 0.07 Ga 0.93 N p-i-n device structures show an IQE of 19% as well as photoemission at 500nm, confirming the suitability of the material for photovoltaic applications.
Chalcogenide Letters Vol. 19, No. 9, September 2022, p. 611 - 619, 2022
The present work aims to improve the power and the conversion efficiency of solar cells, using the PC1D simulator, to study the performances of the solar cells based on (InGaN). The paper focuses first on optimization of the technological and geometrical parameters such as doping and the thickness of the layers to investigate their influence on the conversion efficiency of these structures. Then, the paper evaluates the efficiency η for the solar cell with and without Anti-reflection coating ARC on textured surfaces to achieve a final increase of 22.5% of conversion efficiency compared to InGaN standard solar cells.
High conversion and quantum efficiency indium rich p InGaNp InGaNn InGaN solar cell
In this paper, an efficient three-layered pIn 0.6 Ga 0.6 N/p-In 0.7 Ga 0.7 N/n-In 0.7 Ga 0.7 N (PPN) solar cell was designed. The characteristics of the PPN-junction InGaN solar cell were simulated using the SCAPS-1D software. The effects of the thickness and carrier density of the PPN layer on solar cell performance were evaluated. The results were compared with those of the performance of the PN-junction solar cell. Results revealed that a thin top p-InGaN with a high carrier density had a considerable influence on the performance of the solar cell. Adding a p-InGaN layer as thin as 0.01 μm on the top of the PN-junction solar cell substantially improved the conversion efficiency of the solar cell from 21.39% (PN) to 30.23% (PPN).
Simulation and optimization of a tandem solar cell based on InGaN
Mathematics and Computers in Simulation, 2018
The present paper indicates a numerical simulation to optimize the photovoltaic characteristics of an InGaN tandem solar cell. The cell is composed of two sub-cells pIn x Ga 1-x N/i-In x Ga 1-x N/n-In x Ga 1-x N with indium fraction (x) of 0.05 and 0.15, using sun AM1.5 illumination and SILVACO software for the simulation. The results show that there is an increase in the conversion efficiency compared to that of single-junction pIn x Ga 1 x N/i-In x Ga 1-x N/n-In x Ga 1-x N cells. We have also simulated the effect of p-doping in the top-cell, the indium composition, and the intrinsic layer thickness; on the characteristics of the tandem solar cell. We have reached a conversion efficiency of 3.71% for an intrinsic layers thickness of 0.1 μm and p-doping of 10 18 cm-3 in the top cell.