On the subthreshold measurements of SIC MOSFETs (original) (raw)

2008 IEEE International Conference on Semiconductor Electronics, 2008

Abstract

ABSTRACT Reported here are subthreshold measurements on n-channel 6H-SiC MOSFETs over a range of temperatures. A simple theoretical model is presented to explain their general form. It is shown that the temperature dependence of the subthreshold current indicates a high density of electronic states at or near the SiC-SiO 2 interface. These states are negatively charged when occupied (acceptor-like), and emit their trapped electrons at elevated temperatures. They are believed to be responsible for the observed shift in the subthreshold characteristics at higher temperatures.

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