Characterization of amorphous silicon (original) (raw)

AIP Conference …, 1994

Abstract

S-parameter positron beam measurements have been done on several kinds of a-Si: Kr-sputtered a-Si, PECVD a-Si, MeV ion beam amorphized Si and a-Si grown in an MBE-system at a low deposition temperature. Kr sputtered a-Si becomes denser for higher Kr concentration. PECVD a-Si:H contains micro-cavities with a size depending on growth temperature. MeV ion beam amorphized Si contains 1.2 at.

Alec Reader hasn't uploaded this paper.

Let Alec know you want this paper to be uploaded.

Ask for this paper to be uploaded.