Site-controlled InAs quantum dots grown on a 55 nm thick GaAs buffer layer (original) (raw)

Single site-controlled In(Ga)As/GaAs quantum dots: growth, properties and device integration

Tobias Heindel, Sven Hofling

Nanotechnology, 2009

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Deep levels in GaAs(001)/InAs/InGaAs/GaAs self-assembled quantum dot structures and their effect on quantum dot devices

Tetsuya Asano

Journal of Applied Physics, 2010

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Effects of the quantum dot ripening in high-coverage InAs/GaAs nanostructures

Luca Seravalli

Journal of Applied Physics, 2007

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Formation and optical characterization of single InAs quantum dots grown on GaAs nanoholes

Luisa Gonzalez

Applied Physics Letters, 2007

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An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode

Minisha Mehta

Applied Physics Letters, 2010

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Self-assembled quantum dots with tunable thickness of the wetting layer: Role of vertical confinement on interlevel spacing

Dieter Bimberg

Physical Review B, 2009

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Integration of site-controlled pyramidal quantum dots and photonic crystal membrane cavities

Pascal Gallo

Applied Physics Letters, 2008

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Electron beam prepatterning for site control of self-assembled quantum dots

L. Samuelson

Applied Physics Letters, 2001

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In-situ height engineering of InGaAs / GaAs quantum dots by chemical beam epitaxy

Denis Morris

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Site-controlled In(Ga)As/GaAs quantum dots for integration into optically and electrically operated devices

Tobias Heindel, Sven Hofling

Journal of Crystal Growth, 2011

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Site-controlled growth of InP/GaInP quantum dots on GaAs substrates

Sven Hofling

Nanotechnology, 2012

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Site-controlled self-assembled InAs quantum dots grown on GaAs substrates

Jen-inn Chyi

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Special Issue on Optoelectronic Devices Based on Quantum Dots

Dieter Bimberg

Proceedings of the IEEE, 2007

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Lateral positioning of InGaAs quantum dots using a buried stressor

Andrei Schliwa

Applied Physics Letters, 2012

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Improved quantum confinement of self-assembled high-density InAs quantum dot molecules in AlGaAs∕GaAs quantum well structures by molecular beam epitaxy

Somsak Panyakeow

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2008

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Wafer-scale epitaxial modulation of quantum dot density

Nadia Antoniadis

Nature Communications

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Impact of the non-planar morphology of pre-patterned substrates on the structural and electronic properties of embedded site-controlled InAs quantum dots

E. Luna

Journal of Applied Physics, 2013

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Direct X-Ray Studies of Epitaxial Semiconductor Quantum Dots.

divine kumah

2009

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Size-dependent properties of single InAs quantum dots grown in nanoimprint lithography patterned GaAs pits

Mihail Dumitrescu

Nanotechnology, 2013

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Site-controlled quantum dots fabricated using an atomic-force microscope assisted technique

Toshiyuki Miyazawa

Nanoscale Research Letters, 2006

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Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

Tobias Heindel

Applied Physics Letters, 2010

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Single InAs quantum dot coupled to different “environments” in one wafer for quantum photonics

Zhichuan Niu, Baoquan Sun

Applied Physics Letters, 2013

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Low density InAs quantum dots with control in energy emission and top surface location

Luisa Gonzalez

Applied Physics Letters, 2008

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Buried single CdTe/CdMnTe quantum dots realized by focused ion beam lithography

W. Ossau

Applied Physics Letters, 1999

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Composition uniformity of site-controlled InAs/GaAs quantum dots

Stefan Heun

Journal of Crystal Growth, 2011

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Critical barrier thickness for the formation of InGaAs/GaAs quantum dots

David Gonzalez

Materials Science and Engineering: C, 2005

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Optical characterization of individual GaAs quantum dots grown with height control technique

A. Vinattieri

Journal of Applied Physics, 2013

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STM and RHEED study of quantum dots obtained by submonolayer epitaxial techniques

S. Tipisev, A. Golubok

Surface Science, 1996

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