Theoretical modelling of S-band thulium-doped silica fibre amplifiers (original) (raw)
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A multi-wavelength pumped thulium doped fiber amplifier is investigated to extend the spectral gain coverage of the amplifier in the 1.7-1.9μm wavelength range. Through the use of a combination of 791 nm, 1240 nm, and 1560 nm laser diode pumping, the amplifier gain can be improved significantly and overall gain bandwidth enhancement of ~47% as compared to single-wavelength pumping achieved. A nominal gain of 15 dB is achieved over a bandwidth of more than 250 nm spanning from 1700 to 1950 nm with a maximum gain of 29 dB and a noise figure of less than 5 dB.
Thulium Doped Fiber Amplifier (TDFA) for S-band WDM Systems
Open Journal of Applied Sciences
A comprehensive numerical model based on solving rate equations of a thulium-doped silica-based fiber amplifier is evaluated. The pump power and thulium-doped fiber (TDF) length for single-pass Thulium-Doped Fiber Amplifiers (TDFA) are theoretically optimized to achieve the optimum Gain and Noise Figure (NF) at the center of S-band region. The 1064 nm pump is used to provide both ground-state and excited state absorptions for amplification in the S-band region. The theoretical result is in agreement with the published experimental result.
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Thulium doped fiber amplifier in the SIS + band Employing Different Concentration profiles By
2009
This work contains a comparative study for the signal gain of thulium-doped fiber amplifier (TDFA) in the S-Band. Different doping techniques are used to obtain different concentration profiles in silica fibers. The optimal one is found to be the step like profile. TDFA is investigated in new prepared glass hosts. These hosts include: silicate, bismuth, fluoride, tellurite, chalcohalide, and heavy metal oxide. The effect ofthe different parameters on signal gain of the optical amplifiers is studied, followed by a comparison to select the best glass host. Results showed that the highest gain can provide by bismuth (Bi) glass host and broad band gain from 1450 nm to 1520 nm with a peak wavelength around 1480 nm. A maximum gain above 28.5 dB is obtained with 11 m long Bi-TDFA. These characteristics indicate that Bi-TDFA is a very promising candidate for S-band amplifiers. Indlex Ternms: Thulium, Concentration Profile, Optical Fiber Amplifiers, Wavelength Division Multiplexing (WD:M).
This paper aims to evaluate a comprehensive numerical model based on solving rate equations of a thulium-doped silica-based fiber amplifier. The pump power and thulium-doped fiber (TDF) length for single-pass thulium-doped fiber amplifiers (TDFA) are theoretically optimized to achieve the optimum gain and noise figure (NF) at the center of S-band region. The 1064 nm pump is used to provide both ground-state and excited state absorptions for amplification in the S-band region. The theoretical result is in agreement with the published experimental result.
Optik - International Journal for Light and Electron Optics, 2013
This paper aims to evaluate a comprehensive numerical model based on solving rate equations of a thuliumdoped silica-based fiber amplifier. The pump power and thuliumdoped fiber (TDF) length for single-pass Thulium-Doped Fiber Amplifiers (TDFA) are theoretically optimized to achieve the optimum Gain and Noise Figure (NF) at the center of S-band region. The 1064 nm pump is used to provide both ground-state and excited state absorptions for amplification in the S-band region. The theoretical result is in agreement with the published experimental result.
This paper aims to evaluate a comprehensive numerical model based on solving rate equations of a thulium-doped silica-based fiber amplifier. The pump power and thulium-doped fiber (TDF) length for single-pass thulium-doped fiber amplifiers (TDFA) are theoretically optimized to achieve the optimum gain and noise figure (NF) at the center of S-band region. The 1064 nm pump is used to provide both ground-state and excited state absorptions for amplification in the S-band region. The theoretical result is in agreement with the published experimental result.
2012
Silica-based thulium-doped fiber devices operating around 810 nm would extend the spectral range covered by highpower fiber devices. Using a comprehensive numerical model of the fiber we have shown that efficient lasing at 810 nm can be achieved for specific ranges of the laser cavity parameters in silica-based thulium-doped fibers with enhanced 3 H 4 lifetime up to 58 µs as measured in our highly alumina-codoped fibers. We present optimization of the thulium-doped fiber and laser cavity parameters and also potential applications of the developed host material in amplifiers and broadband sources.