Chalcogenide Amorphous Semiconductors: Chemical Modification or Doping? (original) (raw)
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Amorphous Chalcogenide Semiconductors and Related Materials
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Study of Morphological, Electrical and Optical behaviour of Amorphous Chalcogenide Semiconductor
Condensed Matter Physics [Working Title]
Amorphous chalcogenide semiconductor plays a key role in search for novel functional materials with excellent optical and electrical properties. The science of chalcogenide semiconductor (CS) show broad spectrum of soluble alloy and a wider band gap device that access the optimal energy bandgap. The electronic properties of these alloys can be tuned by controlling the proportion of (S, Se, Te). The chalcogenide semiconducting (CS) alloys are promising candidates because of low band gap (1.0-1.6 eV) and high extinction coefficient in the visible region of solar spectrum. The band structure of amorphous semiconductor governed the transport properties and evaluates various factors such as Tauc gap, defect states, mobility edges. In the extended and localized state of amorphous semiconductor an electron goes various transition, absorption/ emission, transport which is due to drift and diffusion under DC electric fields. CS, including sulfides, selenides, and tellurides, have been broadly utilized in variety of energy conversion and storage devices for example, solar cells, fuel cells, light-emitting diodes, IR detector, Li/Na-ion batteries, supercapacitors, thermoelectric devices, etc. Here, we report various morphological electrical, structural, and optical properties of InSeS thin films prepared by Melt Quenching thermal evaporation technique.
6. Conductivity effects in amorphous chalcogenide films
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Thin amorphous films of chalcogenide Te 48-A~,8-Ge6-Si28 were prepared and their current-voltage (l-V) characteristics were examined. Memory switching effects were observed which were stable and reproducible, but the switching voltage was found to depend on the restoring voltage in a regular way for cyclic switching. Furthermore, the time delay for an applied voltage pulse to cause switching may be related to the I-V curve prior the switching. This dependence seems to support an electronic mechanism of switching.
Electrical properties of Bi-implanted amorphous chalcogenide films
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The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms onset of the electron conductivity in GeTe implanted with Bi at a dose of 2x10 16 cm -2 . The enhanced conductivity is accompanied by defect accumulation in the films upon implantation as is inferred by using analysis of the space-charge limited current. The results indicate that native coordination defects in lone-pair semiconductors can be deactivated by means of ion implantation, and higher conductivity of the films stems from additional electrically active defects created by implantation of bismuth.
Journal of information and communication convergence engineering, 2011
The absence of deep traps for electrons in the spectrum of As 40 Se 30 S 30 localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As 40 Se 30 S 30 films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.
Journal of Non-Crystalline Solids, 2007
The atomic structure of amorphous As 2 Se 3 and As 2 S 3 films prepared by thermal evaporation in a vacuum and by RF ion-plasma sputtering has been studied by the methods of X-ray diffraction and Raman spectroscopy. The techniques of film preparation had different conditions of substance vaporization and atom condensation on a substrate. It has been established that films prepared by these methods have significant differences in the dimensions of the medium-range order and in the local atomic structure, which causes considerable differences in their electronic properties.
Chalcogenides — Past, Present, Future
ChemInform, 2006
A review of the evolution of the amorphous chalcogenide field of research from early times up to the present state of the art is presented. On the basis of recent achievements a bright future for these materials is predicted.
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Investigations of photophysical processes in amorphous chalcogenide semiconductor layers were extended during the last decade towards the nanostructures. Nano-layered films or nanomultilayers (NML) were in the focus of the development of new photosensitive, optical recording media. A short review of the progress made in the technology of new NML structures and in the understanding correlations between stimulated interdiffusion and optical transformations, surface relief recording is presented. This is the text of the abstract.
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Two chalcogenide films with composition Ge 25-x Sb 10 +x S 65 (x = 0, 10) and Te 20 As 30 Se 50 , called 2S1G and TAS, respectively, are studied. These materials have high linear and nonlinear refractive indices and present interesting photosensitive behavior toward bandgap light. Further, these chalcogenides glasses can be deposited in an amorphous thin film for optical coatings or waveguides. Their properties and limitations, including their photoinduction effects, nonlinear Kerr effect, photodiffusion of silver, and aging, are discussed.