Self-assembling of nanovoids in 800-keV Ge-implanted Si/SiGe multilayered structures (original) (raw)

Physical Review B, 2003

Abstract

ABSTRACT We report on the self-assembled formation of spherically shaped voids in a Si/SiGe layered structure after 800-keV Ge ion implantation followed by rapid thermal annealing. The voids are of nanometer size and are solely assembled in thin SiGe quantum wells in the surface region (<R-p/2) of the implanted sample. The results are discussed in terms of the separation of the vacancy and interstitial depth profiles attributed to the preferential forward momentum of recoiling Si atoms. The strain situation around the SiGe quantum wells is suggested as a possible reason for the void self-assembling effect.

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