Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC (original) (raw)

2014, Applied Physics Letters

The orientation dependence of the piezoresistive effect of p-type single crystalline 3C-SiC thin film grown on a (100)Si wafer was characterized. The longitudinal, transverse gauge factors in [100] orientation, and longitudinal gauge factor in [110] orientation were found to be 5.8, À5.2, and 30.3, respectively. The fundamental piezoresistive coefficients p 11 , p 12 , and p 44 of p-type 3C-SiC were obtained to be 1.5 Â 10 À11 Pa À1 , À1.4 Â 10 À11 Pa À1 , and 18.1 Â 10 À11 Pa À1 , respectively. From these coefficients, the piezoresistive effect in any crystallographic orientation in p-type single crystalline 3C-SiC can be estimated, which is very valuable in designing micro-mechanical sensors. V

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