Effect of the Landau level broadening on the quantum Hall conductance (original) (raw)

In a previous paper, Kliros et al. presented a model calculation of the Hall conductivity as a function of the Landau level broadening F for finite temperatures. In this paper, the effect of Landau-level broadening on the structure of the Hall conductivity is investigated. The experimental data regarding the Si-MOSFET and GaAs-heterostructure experiments are reproduced including a functional dependence of F on the magnetic field. The influence of the effective g-factor is considered as well. PACS 72.20.My-Galvanomagnetic and other magnetotransport effects. PACS 73.20.Dx-Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds).