Zinc telluride films by photoenhanced metalorganic chemical vapor deposition (original) (raw)
1991, Journal of Electronic Materials
Polycrystalline films of zinc telluride (ZnTe) have been deposited on glass and conducting semiconductor coated glass substrates at 270~176 C by photoenhanced metalorganic chemical vapor deposition (PECVD) using the reaction of dimethylzinc (DMZn) or diethylzinc (DEZn) and diisopropyltellurium (DIPTe) in hydrogen under atmospheric pressure. The deposited films are always of p-type conductivity. Their properties are affected by the DMZn/DIPTe or DEZn/DIPTe molar ratio in the reaction mixture. The optimum DMZn/DIPTe ratio has been found to be approximately 0.9 on the basis of the open-circuit voltage of ZnTe/CdS heterojunctions and photoconductivity measurements. Without intentional doping, the deposited films are of high resistivity (>107 ohm-cm) at room temperature, and the resistivity of these films has been controlled by using arsine as a dopant. The structural, optical, and electrical properties of ZnTe films have been characterized.
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