Pressure Sensor Interface Circuit Based on Silicon Carbide Electronics for Harsh Environment Operation (original) (raw)
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Harsh conditions of high temperature and pressure typically present in industrial applications of pressure sensing pose unique challenges to system design, modeling and simulation. Capacitive sensor structures, operating in touch mode at high pressures, present a complicated problem for closed form modeling and numerical simulation. Furthermore, a material such as silicon carbide (SiC) that is able to withstand high temperatures and pressures needs to be used instead of the more conventional silicon. The absence of standard circuit models for simulation of SiC devices makes circuit design challenging. This paper presents the processes of modeling, design and simulation of a capacitive pressure sensor structure based on SiC as well as the extraction of SPICE models for the simulation of SiC MOSFETs and the use of these models for the design of a sensor interface circuit. Finally, the functionality of the whole system is simulated using commercial electronic design automation (EDA) software.
Wireless pressure sensor using laser targeting of silicon carbide
Optical Engineering, 2007
To the best of our knowledge, proposed is the first extremeenvironment wireless pressure sensor design using a remoted singlecrystal SiC chip within a pressurized capsule. A detailed theoretical analysis of the sensor system is performed, including the SiC chip's mechanical response within the pressure capsule and the pressure measurement technique's optical response based on image demagnification. The remote sensor was experimentally tested at room temperature for pressures up to 41 atm, and the sensor response is consistent with the theoretical analysis. The demonstrated sensor has a current experimental resolution of 1.17 atm with a designed maximum pressure range of 140 atm. Improved sensing resolution and range can be achieved via optimal selection of the SiC chip's dimensions and its seating in the pressure capsule. Applications for this sensor include extreme environments involving hot gases and corrosive fluids, as in power generation systems, oil field operations, and aerospace systems.
High-temperature single-crystal 3C-SiC capacitive pressure sensor
IEEE Sensors Journal
Single-crystal 3C-silicon carbide (SiC) capacitive pressure sensors are proposed for high-temperature sensing applications. The prototype device consists of an edge-clamped circular 3C-SiC diaphragm with a radius of 400 μm and a thickness of 0.5 μm suspended over a 2-μm sealed cavity on a silicon substrate. The 3C-SiC film is grown epitaxially on a 100-mm diameter <100> silicon substrate by atmospheric pressure chemical vapor deposition. The fabricated sensor demonstrates a high-temperature sensing capability up to 400°C, limited by the test setup. At 400°C, the device achieves a linear characteristic response between 1100 and 1760 torr with a sensitivity of 7.7 fF/torr, a linearity of 2.1%, and a hysterisis of 3.7% with a sensing repeatability of 39 torr (52 mbar). A wide range of sensor specifications, such as linear ranges, sensitivities, and capacitance values, can be achieved by choosing the proper device geometrical parameters.
Reliability evaluation of direct chip attached silicon carbide pressure transducers
Proceedings of IEEE Sensors, 2004., 2004
An accelerated stress test (AST) protocol has been developed and used to evaluate the reliability of 6H-silicon carbide (SiC) pressure transducers for operation up to 400 o C for 100 hours. After several cyclic excursions to 400 o C, the maximum drift of the zero pressure offset voltage at 25 o C was 1.9 mV, while the maximum drift at 400 o C was 2.0 mV. The full-scale sensitivity to pressure before and after the AST was 36.6 µV/V/psi at 25 o C and 20.5 µV/V/psi at 400 o C, with a maximum drift of ± 1 µV/V/psi. No systematic degradation of the zero pressure offset was observed.
Journal of Engineering, 2014
This paper discusses the mechanical and electrical effects on 3C-SiC and Si thin film as a diaphragm for MEMS capacitive pressure sensor operating for extreme temperature which is 1000 K. This work compares the design of a diaphragm based MEMS capacitive pressure sensor employing 3C-SiC and Si thin films. A 3C-SiC diaphragm was bonded with a thickness of 380 μm Si substrate, and a cavity gap of 2.2 μm is formed between the wafers. The MEMS capacitive pressure sensor designs were simulated using COMSOL ver 4.3 software to compare the diaphragm deflection, capacitive performance analysis, von Mises stress, and total electrical energy performance. Both materials are designed with the same layout dimensional with different thicknesses of the diaphragm which are 1.0 μm, 1.6 μm, and 2.2 μm. It is observed that the 3C-SiC thin film is far superior materials to Si thin film mechanically in withstanding higher applied pressures and temperatures. For 3C-SiC and Si, the maximum von Mises stres...
Capacitive pressure sensors based on MEMS, operating in harsh environments
2008
Micro-electromechanical systems (MEMS) capacitive pressure sensors operating at harsh environments (e.g. high temperature) are proposed because of SiC owing excellent electrical stability, mechanical robustness, and chemical inertness properties. The principle of this paper is, design, simulation. The application of SiC pressure sensors are in a harsh environments such as automotive industries, aerospace, oil/logging equipments, nuclear station, power station. The sensor demonstrated a high temperature sensing capability up to 400 °C, the device achieves a linear characteristic response and consists of a circular clamped-edges poly-sic diaphragm suspended over sealed cavity on a silicon carbide substrate. The sensor is operating in touch mode capacitive pressure sensor, The advantages of a touch mode are the robust structure that make the sensor to withstand harsh environment, near linear output, and large over-range protection, operating in wide range of pressure, higher sensitivity than the near linear operation in normal mode, so in this case some of stray capacitance effects can be neglected.
Silicon Carbide-Based Remote Wireless Optical Pressure Sensor
IEEE Photonics Technology Letters, 2007
Proposed is a silicon carbide (SiC) weak-lensingeffect-based wireless optical sensor that allows safe, repeatable, and accurate pressure measurement suitable for harsh environments. This completely passive front-end sensor design uses a remoted free-space optical beam that targets a single crystal SiC chip fitted as an optical window within a pressure capsule. With increasing differential capsule pressure, the SiC chip forms a weak convex mirror with a changing focal length. By monitoring the chip reflected light beam magnification, pressure in the capsule is determined. Using a 633-nm wavelength laser beam, the proposed sensor is experimentally tested at room temperature for 0-to 600-psi (0-41 atm) differential pressures and a remoting distance of 2.5 m.
High Reliability of MEMS Packaged Capacitive Pressure Sensor Employing 3C-SiC for High Temperature
Energy Procedia, 2015
This study develops the prototype of a micro-electro-mechanical systems (MEMS) packaged capacitive pressure sensor employing 3C-SiC diaphragm for high temperature devices. The 3C-SiC diaphragm is designed with the thicknesses of 1.0 μm and the width and length of 2.0 mm x 2.0 mm. The fabricated sensor is combined with a reliable stainless steel o-ring packaging concept as a simple assembly approach to reduce the manufacturing cost. There is an o-ring seal at the sensor devices an advantageous for high reliability, small size, lightweight, smart interface features and easy maintenance services. The stability and performance of the prototype devices has been tested for three test group and measured by using LCR meter. The prototypes of MEMS capacitive pressure sensor are characterized under static pressure of 5.0 MPa and temperatures up to 500°C in a stainless steel chamber with direct capacitance measurement. At room temperature (27°C), the sensitivity of the sensor is 0.0096 pF/MPa in the range of pressure (1.0-5.0 MPa), with nonlinearity of 0.49%. At 300°C, the sensitivity is 0.0127 pF/MPa, and the nonlinearity of 0.46%. The sensitivity increased by 0.0031 pF/MPa; corresponding temperature coefficient of sensitivity is 0.058%/°C. At 500°C, the maximum temperature coefficient of output change is 0.073%/°C being measured at 5.0 MPa. The main impact of this work is the ability of the sensor to operate up to 500°C, compare to the previous work using similar 3C-SiC diaphragm that can operates only 300°C. The results also show that MEMS packaged capacitive pressure sensor employing 3C-SiC is performed high reliability for high temperature up to 500°C. In addition, a reliable stainless steel o-ring packaging concept of MEMS packaged capacitive pressure sensor.
Current status of silicon carbide based high-temperature gas sensors
IEEE Transactions on Electron Devices, 1999
Silicon carbide (SiC) based field effect gas sensors can be operated at very high temperatures. Catalytic metalinsulator-silicon carbide (MISiC) Schottky diodes respond very fast to a change between a reducing and an oxidizing atmosphere, and cylinder-specific combustion engine monitoring has been demonstrated. The sensors have also been suggested for hightemperature electronic nose applications. Car applications and other harsh environments put very strong requirements on the long-term stability of the sensors. Here we review the current status of the field of SiC based Schottky diode gas sensors with emphasis on the work in our group. Basic work on understanding of the detection mechanism and the influence of interfacial layers on the long-term stability of the sensors is reviewed. The direction of future research and device development in our group is also discussed.
High-pressure silicon sensor with low-cost packaging
Sensors and Actuators A: Physical, 2001
We present a silicon high-pressure sensor based on fusion bonding with lateral feed-through and a compact low-cost packaging. The sensor has a burst pressure exceeding 3000 bar and can be designed for a maximum pressure in the range from 35 to 1500 bar and temperatures ranging from À40 to 1208C. Design considerations and test results of the sensor are presented. #