ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique (original) (raw)

The growth of ZnO-on-GaN heterostructures was implemented using the vapor cooling condensation system to fabricate p-GaN/n-ZnO:In (p-n) and p-GaN/i-ZnO/n-ZnO:In (p-i-n) light-emitting diodes (LEDs). Both structures exhibited rectifying diodelike behavior with specific forward turn-on and reverse breakdown voltages. Photoluminescence and electroluminescence studies confirmed the emission characteristics of the ZnO layer, emphasizing its potential for UV LED applications, particularly in high-temperature environments.