ON-WAFER LOW FREQUENCY NOISE INVESTIGATION OF THE 0.35 µ µ µ µm n AND p TYPE MOSFETS, DEPENDENCE UPON THE GATE GEOMETRY (original) (raw)
Low frequency noise of p and n type MOSFETs were investigated. Flicker noise was found dominating in the spectra of MOSFETs low frequency fluctuations. Simulations were performed using both models associated with mobility fluctuations and trapping of current. Good fit of the simulated to the measured noise data enabled an extraction of the effective density of the interface states, the spectral density of the flat band voltage fluctuations and Hooge parameter α α α αH H H H. For n type MOSFETs grown on the same wafer the flicker noise was found to be one order of magnitude higher than that for the p type devices.
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