In0.49Ga0.51P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations (original) (raw)
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InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer
Electronics Letters, 2008
Institute .of Technology 2-12-l O-okayama, Meguro-ku, Tolqo 152, JAZAN In6.5Ga6.5PlGaAs heterojunction bipolar transistors (HBTs) having a heavily carbon (C)-doped GaAs base with an ultra-high hole concenffation of 1.5x1021 cm-3 were successfully fabricated by metalorganic molecular beam epitaxy (MOMBE) for the first time. Tertiarybutylphosphine (TBPj, elemental In and elemental Ga were used as source materials for the growth of Ing.5Ga'.5P emitter and trimethylgallium (TMG) and elemental arsenic (As+) for the growth of GaAs base. Small signal current gain h1, of 16 and DC current gain hps of 12 were obtained for devices with a base thickness of 15 nm despite the ultra-high doping in the base layer.
IEEE Journal of the Electron Devices Society
N-p-n InGaP/GaAs double heterojunction bipolar transistor has been successfully grown on a 200 mm Ge/Si wafer using metalorganic chemical vapor deposition with low defect density of 10 7 cm −2. Non-gold metals of Ni/Ge/Al and Ti/Al are used to form the ohmic contact for small pieces device fabrication. Both direct-current (dc) and high-frequency characteristics of the device were measured. The device with emitter area of 6×8 µm 2 shows a dc gain of 55 at a collector current of I c = 4 mA, with high collector-emitter breakdown voltage of ∼17 V. The high-frequency response with cutoff frequency (f T) of 23 GHz and maximum available frequency (f max) of 10 GHz can be achieved. These results demonstrate that InGaP/GaAs double heterojunction bipolar transistor grown on low defect density Ge/Si wafer has the potential for realizing III-V CMOS integrated platform for high-frequency applications.
Microelectronics Journal, 2004
This paper presents a comprehensive comparison of three state-of-the-art heterojunction bipolar transistors (HBTs); the AlGaAs/GaAs HBT, the Si/SiGe HBT and the InGaAs/InP HBT. Our aim in this paper is to find the potentials and limitations of these devices and analyze them under common Figure of Merit (FOM) definitions as well as to make a meaningful comparison which is necessary for a technology choice especially in RF-circuit and system level applications such as power amplifier, low noise amplifier circuits and transceiver/receiver systems. Simulation of an HBT device with an HBT model instead of traditional BJT models is also presented for the AlGaAs/GaAs HBT. To the best of our knowledge, this work covers the most extensive FOM analysis for these devices such as I-V behavior, stability, power gain analysis, characteristic frequencies and minimum noise figure. DC and bias point simulations of the devices are performed using Agilent's ADS design tool and a comparison is given for a wide range of FOM specifications. Based on our literature survey and simulation results, we have concluded that GaAs based HBTs are suitable for high-power applications due to their high-breakdown voltages, SiGe based HBTs are promising for low noise applications due to their low noise figures and InP will be the choice if very high-data rates is of primary importance since InP based HBT transistors have superior material properties leading to Terahertz frequency operation. q
InGaP/GaAs Heterojunction Bipolar Transistors
2015
A 4W super ruggedness InGaP/GaAs HBT for GSM power amplifier applications is presented. With improved epi-structure, layout and process, the device can be survived at 25:1 VSWR. To our knowledge, this is the highest ruggedness achieved for a 4W InGaP/GaAs HBT. In addition, the device shows good power performance with typical 36 dBm output power, 18 dB linear gain and 64% PAE at 900 MHz and 35 dBm output power, 15 dB linear gain and 60 % PAE at 1800 MHz, respectively. This device is excellent candidate for not only GSM but also DCS/PCS PA applications.
Assessment of layer structures for GaInP/GaAs-heterojunction bipolar transistors
Materials Science and Engineering: B, 1999
GaAs-based heterojunction bipolar transistors (HBTs) are expected to take an increasing share of the currently expanding market for mobile communications products. The GaInP/GaAs-system offers advantages for device performance and fabrication in comparison with the already established AlGaAs/GaAs-system. However, HBT fabrication is still not mature technology. The main obstacle is the reproducible supply of high quality HBT epitaxial layer structures. An appropriate evaluation of the HBT layer structures is essential to successfully establish the epitaxial growth technology. The ratio of current gain to base sheet resistance is known to be one of the most meaningful figures of merit for the HBT. Therefore, the development of proper epitaxial growth procedures for HBT layer structures includes a device qualification. To the end of the evaluation of GalnP/GaAs-HBT layer structures we have established a fast HBT process that additionally provides windows for material analysis in different depths of the structure. The fundamental device performance and the wafer uniformity are assessed by dc parameter mapping of large area devices and conventional test structures. Several material diagnostic techniques were applied to assess layer properties. Some of the capabilities of these methods are discussed. Our fast HBT process has been instrumental in the development of GalnP/GaAs HBT layer structures at Epitaxial Products International. Current gain of 161 at the base sheet resistance of 273 V sq − 1 with a standard deviation of the current gain across a 3 in. wafer of 1% proves that these GalnP/GaAs-HBT layer structures are comparable with currently available state-of-the-art AlGaAs/GaAs-HBT layer structures. Parts of the work were performed within the EC-project ESPRIT 21315 GAMMA.
High-gain, high-speed InGaAs/InP heterojunction bipolar transistors
1990
We report high quality InGaAs/InP heterojunction bipolar transistors (HBT's) grown by metalorganic chemical deposition (MOCVD) utilizing a wide base structure and exhibiting behavior suggesting good alignment of the electrical and metallurgical junctions. Excellent dc and rf HBT characteristics were obtained with common-emitter dc current gains (P's) up to 1. 5~ 103, small-signal current gains (h,,'s) up to 3.9~103, and unity-gain cutoff frequencies (fT's) up to 15 GHz.
High-performance InP/In/sub 0.53/Ga/sub 0.47/As/InP double HBTs on GaAs substrates
IEEE Electron Device Letters, 2002
InP/In 0 53 Ga 0 47 As/InP double heterojunction bipolar transistors (HBTs) were grown on GaAs substrates. A 140 GHz power-gain cutoff frequency max and a 207 GHz current-gain cutoff frequency were obtained, presently the highest reported values for metamorphic HBTs. The breakdown voltage BV was 5.5 V, while the dc current gain was 76. High-thermal-conductivity InP metamorphic buffer layers were employed in order to minimize the device-thermal resistance.
2007
Heterojunction bipolar transistors (HBTs) extend the advantages of silicon bipolar transistors to significantly higher frequencies. They are used in applications requiring high current capacities, high transconductance, high voltage handling capability, low noise and uniform threshold voltage [1]-[2]. The InGaP/GaAs HBT is an important investigation topic in power amplifiers [3]-[4], but the technology is also applicable to low noise amplifiers in the range of frequencies from 2 to 6 GHz. Reference [5] shows results of an LNA for WLAN applications at 5.3 GHz with 13 dB gain, noise figure of 2.1 dB and excellent linearity in terms of IIP3. Numerical modeling of semiconductor devices allows to deep in the implications that the geometry and the characteristics of the materials have in the real operation of the device [6]-[7]. Several geometric implications of the InGaP/GaAs HBT design have been studied, theoretical and experimentally, in order to obtain better device performance [8]-[9...
Journal of Crystal Growth, 2011
The material and device characteristics of InGaN/GaN heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapor deposition are examined. Two structures with different p-In x Ga 1 À x N base region compositions, x In ¼ 0.03 and 0.05, are presented in a comparative study. The higher indium content base is expected to provide improvements in device performance via its higher p-type doping efficiency and lower bulk resistivity. However, the DC gain for both devices is the same at $ 37. The tradeoffs involved with using higher indium composition in the base for NpN HBTs are investigated by atomic force microscopy, Hall-effect measurement, and device characterization.
GaAs Heterojunction Bipolar Transistor Emitter Design
We demonstrate that GaAs-based HBTs with very low base currents at both low and high injection levels can be achieved using either Al 0.35 Ga 0.65 As or InGaP in the emitter with the proper optimization of structure and growth. We observe an order of magnitude reduction in space charge recombination current as the Al composition, and hence the energy-gap, of the emitter increases from 25% (1.77 eV) to 35% (1.89 eV). AlGaAs/GaAs HBTs with approximately 35% Al have the same energy-gap as InGaP and exhibit comparable space charge recombination in large area devices (L = 75 x 75 µm 2 ). Moreover, this reduction in the space charge recombination in Al 0.35 Ga 0.65 As/GaAs HBTs can be achieved while maintaining a low turn-on voltage and high DC current gain over a wide range of current densities. Small area devices (L = 1.4 x 3 µm 2 ) fabricated with an Al 0.35 Ga 0.65 As emitter and a base sheet resistance of 330 Ω/V exhibit very high DC current gain at all bias levels, with a DC current gain exceeding 140 @ 25 A/cm 2 and a peak DC current gain of 210 @ 26 kA/cm 2 . The temperature dependence of the peak DC current gain is significantly improved over a similar structure with a 25% AlGaAs emitter. The RF performance of the 35% AlGaAs structure is also comparable to the 25% structure, with an f t of 34 GHz and an f max of 55 GHz.