Epitaxial growth of Sb/GaSb structures: An example of V/III‐V heteroepitaxy (original) (raw)
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Epitaxial growth of GaSb(111) on Sb(111) by interdiffusion assisted molecular beam epitaxy
Surface Science, 1995
GaSb has been grown epitaxially on Sb(ll1) substrates. Epitaxial growth occurs due to the interdiffkion when gallium is evaporated onto heated Sb substrates. We have studied the influence of the substrate temperature and of the gallium flux on the interdiffusion and the resulting layer quality and stoichiometry by reflection high energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS) an: Raman spectroscopy. The best layers were obtained at a substrate temperature of about 300°C and a growth rate of 0.25 A s-l.
Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy
Journal of Applied Physics, 2012
A GaSb film was grown on a Si(211) substrate using molecular beam epitaxy indicating full lattice relaxation as well as full lattice registration and dislocation-free growth in the plane perpendicular to the [01 À 1]-direction. Heteroepitaxy of GaSb on a Si(211) substrate is dominated by numerous first order and multiple higher order micro-twins. The atomic-resolved structural study of GaSb films by high-angle annular dark-field scanning transmission electron microscopy reveals that slight tilt, along with twinning, favors the lattice registry to Si(211) substrates. Preferential bonding of impinging Ga and Sb atoms at the interface due to two distinctive bonding sites on the Si(211) surface enables growth that is sublattice-ordered and free of anti-phase boundaries. The role of the substrate orientation on the strain distribution of GaSb epilayers is further elucidated by investigating the local change in the lattice parameter using the geometric phase analysis method and hence effectiveness of the lattice tilting in reducing the interfacial strain was confirmed further.
Japanese Journal of Applied Physics
The single crystalline III-V films on substrates such as silicon and germanium are preferred by researchers to enhance the performance of a MOSFET or CMOS. In this study, we investigated the possible factors responsible for generating twin crystal growth for III-antimonides, especially GaSb grown on Si(111). We tested several base templates such as Si(111)-√3 × √3-Ga, Si(111)-√3 × √3-In, Si(111)-direct, and we have varied the growth conditions through varying the substrate temperature and growth rate. The molecular beam epitaxy growth method was used to deposit GaSb films. Our results reflect that in absence of an initial layer of GaSb film grown at a low substrate temperature, the anti-phase domains and defect densities cannot be reduced which results in the formation of twin crystal. We found that the high substrate temperature during the growth is the deciding factor in generating twin crystal growth.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Secondary-ion-mass spectrometry and high-resolution x-ray diffraction are used to investigate Al x Ga 1Ϫx Sb/GaSb heterostructures (0.2ϽxϽ1) grown by molecular beam epitaxy. We show that the AlCs ϩ and GaCs ϩ intensities, obtained by using caesium cluster secondary-ion-mass spectrometry mode, vary linearly with the relative concentrations, and therefore, allows us to evaluate quantitatively the aluminum and gallium contents in the epitaxial layers. Intermixing of Ga/Al species at the GaSb/AlSb interfaces could be clearly detected by secondary-ion-mass spectrometry and is also confirmed by high-resolution x-ray diffraction. The intermixing is the result of a particular mechanism in order to minimize the strain energy, and occurs prior to the lattice relaxation, which generates structural defects taking place. The analyses also give evidence of a constant arsenic contamination ͑ϳ0.5%͒ both in the GaSb buffer and in the Al x Ga 1Ϫx Sb layers. In fact, As contamination occurs if the molecular beam epitaxy chamber has been used previously for the growth of As-compound materials. We show that the signal obtained by using the caesium cluster secondary-ion-mass spectrometry mode AsCs ϩ is nearly unaffected by the changes of the Al content throughout the total structure ͑matrix effects͒ contrary to what occurs for single As ions.
physica status solidi (a), 2019
The growth of GaSb on Ge (111) vicinal substrates is performed by molecular beam epitaxy with Bi irradiation previous to and during the growth. The effects of the Bi irradiation on the surface morphology and on the crystallinity are investigated using atomic force microscopy and X-ray diffraction, respectively. It is shown that Bi works as a surfactant, which suppresses the generation of rotational twins in the GaSb layer.
Optical properties of GaSbAlSb heterostructures grown by molecular beam epitaxy
Materials Science and Engineering: B, 1993
In the first part of this paper we discuss the optimization of the growth conditions of molecular beam epitaxy GaSb layers. Then we present preliminary results for GaSb-AlSb multiple quantum wells which have one excitonic absorption line peaking at about 1.5 #m at room temperature. Finally we present a 10 pair Bragg reflector which shows 97% reflectivity. These preliminary results allow the GaSb-AISb system to be considered for optoelectronic devices.
Interface engineering for improved growth of GaSb on Si(111)
Journal of Crystal Growth, 2011
Molecular beam epitaxy growth of GaSb growth on Si(1 1 1) substrates can be improved by predepositing Sb at high temperature. The ( ffiffiffi 3 p  ffiffiffi 3 p Þ reconstruction obtained by this procedure results in closed heteroepitaxial GaSb layers in contrast to the direct growth on Si(1 1 1)(7  7) which produces islands. The growth is characterized by atomic force microscopy, electron and X-ray diffractions. On the basis of these investigations, the formation of an interface misfit dislocation network is discussed.
MBE growth and characterisation of AlxGa1−xSb layers on GaSb substrates
Journal of Crystal Growth, 1999
V Ga \V Sb layers on GaSb(0 0 1) have been grown by molecular beam epitaxy (MBE) and characterised by high-resolution X-ray di!raction (HRXRD) and secondary ion mass spectrometry (SIMS) measurements. The antimonide layers inevitably contain residual As amounting to 0.5 mol%. This cannot be avoided when growing the "lms in a MBE apparatus previously used for GaAs growth, at least for the applied growth temperature of 4703C. Segregation processes of Ga from the GaSb bu!er layer and Al from the heteroepitaxial layer into the layers above are detected by SIMS. Since monomeric Sb forms metallic "lms on the sample surface, the exposure to a monomeric Sb #ux below 3703C should be avoided in order to obtain a clean surface. The composition of the 150 nm thick quaternary Al V Ga \V As W Sb \W layers was determined with high precision.
Heteroepitaxy growth of GaAsBi on Ge(100) substrate by gas source molecular beam epitaxy
We have investigated the growth of GaAsBi single-crystal film on Ge substrate by gas source molecular beam epitaxy. A high-quality GaAsBi epilayer has been obtained. It has been found that the surfactant effect of Bi suppresses the interdiffusion of Ge at the GaAsBi/Ge interface and reduces the misfit dislocation density. The Bi atoms occupy the As sites, as indicated by the appearance of GaBi-like TO(Γ) and LO(Γ) phonon modes in Raman spectra. In addition, the redshift of the GaAs-like LO(Γ) phonon frequency has been observed in the Raman spectra, owing to the Bi-induced biaxial strain and the alloying effect as well.