Electron traps studied in AlGaN/GaN HEMT on Si substrate using capacitance deep level transient spectroscopy (original) (raw)

Abstract

ABSTRACT Deep levels in AlGaN/GaN high electron mobility transistors (HEMTs) grown by molecular beam epitaxy on silicon (Si) substrates were characterized by the means Capacitance-Voltage and Deep Level Transient Spectroscopy. DLTS Measurements have revealed four electron traps with the binding energies of 0.08, 0.25, 0.47 and 0.59 eV and capture cross-sections of 2.02×10 -18, 1.6×10-16, 1.2×10-12 and 7.02×1013cm2 respectively. The concentrations of the traps were found at around of 1014cm3. The nature and the localization of the traps have been discussed.

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