Si HEMTs (original) (raw)

Abstract

ABSTRACT This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrate. Surface passivation effects on AlGaN/GaN HEMTs were studied using SiO 2 /SiN dielectric layers grown by plasma enhanced chemical vapor deposition. The direct current measurement, pulsed characteristics and microwave small-signal characteristics were studied before and after passivation. An improvement of drain-source current density and the extrinsic transconductance was observed on the passivated HEMTs when compared with the unpassivated HEMTs. An enhancement of cut-off frequency (f t) and maximum power gain (f max) was also observed for the devices with full SiO 2 /SiN passivation. A good correlation is found between pulsed and power measurements. Copyright © 2014 IFSA Publishing, S. L.

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