Summary Abstract: Experiments on ultrathin Al overlayers on GaAs(110) (original) (raw)
1983, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
We investigated the adatom states for different AI coverages ofInP(110) by synchrotron-radiation photoemission, including ultralow coverages below 0.2 monolayer. The adatom states below 0.1 monolayer and above-3 monolayer appear similar to the corresponding Al-adatom states on GaAs(110). In particular, the results for both systems appear consistent with the formation of Al clusters at 0.1-2 monolayer coverage, and the Fermi-level pinning occurs when the cluster formation starts. However, the similarity between the two systems is limited at intermediate (0.1-2 monolayer) coverages. At those coverages we observe a new bonded state for Ai on InP, which is not observed on GaAs. Our results emphasize, in general, the need to extend the experiments to ultralow coverages when studying the Schottky barrier formation process.
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